VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode Glass passivated pellet chip junction 150 C max operating junction temperature 2 Low forward voltage drop and short reverse 2 recovery time Designed and qualified according to 3 JEDEC -JESD 47 1 Material categorization: TO-220AC 13 for definitions of compliance please see Cathode Anode www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY These devices are intended for use in output rectification Package TO-220AC and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on I 10 A F(AV) conducted EMI should be met. V 200 V, 400 V, 600 V R V at I 1.2 V F F DESCRIPTION I 130 A FSM The VS-10ETF0... fast soft recovery rectifier series has been t 50 ns rr optimized for combined short reverse recovery time and low T max. 150 C J forward voltage drop. Diode variation Single die The glass passivation ensures stable reliable operation in Snap factor 0.6 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 200 to 600 V RRM I Sinusoidal waveform 10 F(AV) A I 130 FSM t 1 A, 100 A/s 50 ns rr V 10 A, T = 25 C 1.2 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK REVERSE V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF02PbF, VS-10ETF02-M3 200 300 VS-10ETF04PbF, VS-10ETF04-M3 400 500 3 VS-10ETF06PbF, VS-10ETF06-M3 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 128 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 110 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 130 10 ms sine pulse, rated V applied 60 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 85 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 850 A s Revision: 11-Feb-16 Document Number: 94090 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 10 A, T = 25 C 1.2 V FM J Forward slope resistance r 23.5 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 3.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I FM Reverse recovery time t 200 ns rr I at 10 A t F pk rr Reverse recovery current I 25 A/s 2.75 A rr t 25 C dir Reverse recovery charge Q 0.32 C rr dt Q rr Snap factor S0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance R DC operation 1.5 thJC junction to case Maximum thermal resistance R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10ETF02 Marking device Case style TO-220AC (JEDEC) 10ETF04 10ETF06 Revision: 11-Feb-16 Document Number: 94090 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000