US3M Green 3.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (V) I (A) Glass Passivated Die Construction RRM O F R High Current Capability 1,000 3 1.8 10 Ultra-Fast Recovery Time for High Efficiency Maximum Operating Junction Temperature of +175C Lead Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data 3.0A Surface Mount Glass Passivated Rectifier in SMC package Case: SMC offers high current capability and ultra-fast recovery time for high Case Material: Molded Plastic. efficiency. Designed with glass passivated die construction for high UL Flammability Classification Rating 94V-0 reliability, this device is ideal for applications such as: Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Lead-Free Plating (Matte Tin Finish). Power Supplies Solderable per MIL-STD-202, Method 208 Lighting Ballasts Polarity: Cathode Band or Cathode Notch Weight: 0.21 grams (Approximate) SMC Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging US3M-13 SMC 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See US3M Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 1,000 RWM V DC Blocking Voltage VR RMS Reverse Voltage 700 V V R(RMS) 3.0 A Average Rectified Output Current T = +75C I T O Non-Repetitive Peak Forward Surge Current, 8.3ms 120 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) 26 C/W R JT Operating and Storage Temperature Range -65 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1,000 Reverse Breakdown Voltage (Note 5) V V I =10A (BR)R R Forward Voltage 1.5 1.8 V VF IF = 3.0A 2.2 10 V =1,000V, T = +25C R A Leakage Current (Note 5) I A R 500 14 V =1,000V, T = +125C R A 70 Reverse Recovery Time trr 85 ns I = 0.5A, I = 1.0A, I = 0.25A F R rr 25 Total Capacitance C pF V = 4V, f =1.0MHz T R Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Device mounted on FR-4 substrate, 1 x 1 , 2oz, single-sided, PC boards with 0.15 x 0.26 copper pads. 7. Device mounted on FR-4 substrate, 1 x 1 , 2oz, single-sided, PC boards with 0.56 x 0.73 copper pads. 4 10 T =175C A T =150C A 3.50 T = 125C A 3 1 Note 7 2.50 T =100C A 2 T = 85C A Note 6 1.50 0.1 T = 25C 1 A 0.50 T = -55C A 0 0.01 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) F A Figure 1 DC Forward Current Derating Figure 2 Typical Reverse Characteristics 2 of 5 US3M April 2015 Diodes Incorporated www.diodes.com Document number: DS37228 Rev. 5 - 2 ADVANCED INFORMATION I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) R