VS-10CDH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and soft rr recovery K 175 C maximum operating junction temperature For PFC CRM / CCM, snubber operation 1 Low forward voltage drop 2 Low leakage current Top View Bottom View Meets MSL level 1, per J-STD-020, LF maximum TO-263AC (SMPD) peak of 260 C Meets JESD 201 class 2 whisker test Anode 1 K Material categorization: for definitions of compliance Cathode Anode 2 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast PRODUCT SUMMARY recovery time, and soft recovery. Package TO-263AC (SMPD) The planar structure and the platinum doped life time control I 2 x 5 A F(AV) guarantee the best overall performance, ruggedness, and reliability characteristics. V 600 V R These devices are intended for use in PFC, boost, in the V at I 1 V F F AC/DC section of SMPS, freewheeling and clamp diodes. t 35 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce power Diode variation Dual die dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM per device 10 Average rectified forward current I T = 153 C F(AV) solder pad per diode 5 A per device 110 Non-repetitive peak surge current I T = 25 C, 6 ms square pulse FSM J per diode 60 ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 5 A - 1.2 1.5 F Forward voltage, per diode V F I = 5 A, T = 150 C - 1 1.25 F J V = V rated - - 3 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 15 150 J R R Junction capacitance, per diode C V = 600 V - 6 - pF T R Revision: 10-Feb-15 Document Number: 95808 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10CDH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 35 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 35 F R rr Reverse recovery time t ns rr T = 25 C -45- J = 125 C - 70 - T J I = 5 A, F T = 25 C - 7 - J Peak recovery current I dI /dt = 500 A/s, A RRM F T = 125 C - 10 - J V = 400 V R T = 25 C - 160 - J Reverse recovery charge Q nC rr T = 125 C - 370 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - +175 C J Stg temperature range Thermal resistance, per diode R -2.4 3.3 C/W thJ-Sp junction to solder pad 0.55 g Approximate weight 0.02 oz. Marking device Case style TO-263AC (SMPD) 10CDH06 100 100 T = 175 C J T = 150 C J 10 10 T = 125 C J T = 175 C 1 J 1 0.1 T = 150 C J T = 25 C J T = 125 C J T = 25 C J 0.1 0.01 0.20.4 0.60.8 1.01.2 1.41.6 1.82.0 2.2 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Feb-15 Document Number: 95808 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R