VS-10CDU06-M3/I Vishay

333 3 VS-10CDU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 5 A FRED Pt FEATURES Ultrafast recovery time, reduced Q , and soft rr eSMP Series recovery SMPD (TO-263AC) 175 C maximum operating junction temperature For PFC CRM / CCM, snubber operation K Low forward voltage drop Low leakage current 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 2 Top View Bottom View Meets JESD 201 class 2 whisker test Anode 1 K Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Cathode Anode 2 DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and PRIMARY CHARACTERISTICS reliability characteristics. Package SMPD (TO-263AC) These devices are intended for use in PFC, boost, in the AC/DC section of SMPS, freewheeling and clamp diodes. I 2 x 5 A F(AV) Their extremely optimized stored charge and low recovery V 600 V R current minimize the switching losses and reduce power V at I 1 V F F dissipation in the switching element and snubbers. t 35 ns rr T max. 175 C MECHANICAL DATA J Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM per device 10 Average rectified forward current I T = 153 C F(AV) solder pad per diode 5 A per device 110 Non-repetitive peak surge current I T = 25 C, 6 ms square pulse FSM J per diode 60 ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 5 A - 1.2 1.5 V F Forward voltage, per diode V F I = 5 A, T = 150 C - 1 1.25 F J V = V rated - - 3 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 15 150 J R R Junction capacitance, per diode C V = 600 V - 6 - pF T R Revision: 21-Jan-2021 Document Number: 96518 1 For technical questions, contact: DiodesAmericas vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-10CDU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 35 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 35 F R rr Reverse recovery time t ns rr T = 25 C -45- J T = 125 C - 70 - J I = 5 A, F T = 25 C - 7 - J Peak recovery current I dI /dt = 500 A/s, A RRM F T = 125 C - 10 - J V = 400 V R T = 25 C - 160 - J Reverse recovery charge Q nC rr T = 125 C - 370 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - +175 C J Stg temperature range Thermal resistance, per diode R -2.4 3.3 C/W thJM junction to mount 0.55 g Approximate weight 0.02 oz. Marking device Case style SMPD (TO-263AC) 10CDU06 100 100 T = 175 C J T = 150 C J 10 10 T = 175 C J T = 125 C T = 150C J J 1 T = 125C J 1 T = 25C J 0.1 T = 25 C J T = -40 C J 0.01 0.1 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 96518 2 For technical questions, contact: DiodesAmericas vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R