Ultrafast Rectifiers, Surface Mount, 10 A, 200 V - 600 V FES10D, FES10G, FES10J Features www.onsemi.com Very Low Profile: Typical Height of 1.1 mm Ultrafast Recovery Time Low Forward Voltage Drop 3 Low Thermal Resistance Very Stable Operation at Industrial Temperature, 150C RoHS Compliant 2 Green Molding Compound as per IEC61249 Standard 1 Lead Free in Compliance with EU RoHS 2011/65/EU Directive TO2773LD CASE 340BQ With DAP Option Only Industrial Device Qualified per AECQ101 Standards * See authorized use policy MARKING DIAGRAM MAXIMUM RATINGS Y&Z&3 Parameter Symbol Value Unit * Repetitive Peak Reverse Voltage V V RRM FES10D 200 FES10G 400 Y = ON Semiconductor Logo FES10J 600 &Z = Assembly Plant Code &3 = Date Code (Year & Week) Average Forward Rectified Current I 10 A F(AV) * = Specific Device Code Peak Forward Surge Current: 8.3 ms I 150 A FSM FES10D, FES10G, FES10J Single Half SineWave Superimposed on Rated Load Operating Junction Temperature Range T 55 to C J +175 Anode 1 3 Storage Temperature Range T 55 to C STG Cathode +175 Anode 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 4 FES10D/DFES10D, FES10G, FES10J ORDERING INFORMATION Part Number Top Mark Package Shipping FES10D FES10D TO277 3L (with DAP Option only) 5000 / Tape & Reel FES10G FES10G TO277 3L (with DAP Option only) 5000 / Tape & Reel FES10J FES10J TO277 3L (with DAP Option only) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) (Note 1) A Parameter Symbol Value Unit Thermal Characteristics, JunctiontoLead, Thermocouple Soldered to Cathode 6 C/W JL Thermal Resistance, JunctiontoAmbient R 100 C/W JA 1. Per JESD513 Recommended Thermal Test Board. ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Value Symbol Parameter Conditions FES10D FES10G FES10J Unit V Maximum Instantaneous Forward I = 10 A 0.95 1.20 1.80 V F F Voltage (Note 2) I = 10 A, T = 125C 0.86 1.00 F J I Maximum Reverse Current T = 25C 5 A R J at Rated V R T = 125C 250 500 J C Typical Junction Capacitance V = 4 V, f = 1 MHz 140 pF J R T Typical Reverse Recovery Time I = 0.5 A, I = 1 A, I = 0.25 A 30 ns rr F R RR I = 1 A, di/dt = 50 A/ s, V = 30 A 40 F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 s, 1% duty cycle www.onsemi.com 2