FFAF30UA60S 30 A, 600 V, Ultrafast II Single Diode The FFAF30UA60S is an Ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for www.onsemi.com use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specifically suited for use in switching power supplies and industrial application as welder and UPS application. 30 A, 600 V ULTRAFAST II Features RECTIFIER Ultrafast Recovery, T < 90 ns ( I = 30 A) rr F Max Forward Voltage, V = 2.2 V ( T = 25C) F C 32 600 V Reverse Voltage and High Reliability Avalanche Energy Rated These Devices are PbFree and are RoHS Compliant Typical Applications Boost Diode in PFC and SMPS Welder, UPS, and Motor Control Application ABSOLUTE MAXIMUM RATINGS Per leg at T = 25C unless otherwise noted C 1 Rating Symbol Value Unit TO3PF CASE 340AH Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R MARKING DIAGRAM Average Rectified Forward Current I 30 A F(AV) (Rated V , T = 45C) R C Nonrepetitive Peak Surge Current I 180 A FSM 60 Hz Single HalfSine Wave Operating and Storage Temperature T , T 65 to C J STG Range +175 F30UA60S Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. N/A C A F30UA60S = Specific Device Code ORDERING INFORMATION Device Package Shipping FFAF30UA60S TO3PF 30 / Rail Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: March, 2019 Rev. 1 FFAF30UA60S/DFFAF30UA60S THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, JunctiontoCase, Steady State 2.4 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on an FR4 board) ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V 1 Instantaneous Forward Voltage I = 30 A, T = 25C 2.2 V FM F C I = 30 A, T = 125C 2.0 F C I 1 Instantaneous Reverse Current V = 600 V, T = 25C 100 A RM R C V = 600 V, T = 125C 150 R C Reverse Recovery Trr I = 30 A, di /dt = 200/ s, T = 25C 90 Ns F F C Irr 8 A Qrr 360 nC W Avalanche Energy L = 40 mH 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2