NRVHP8H200MFD Switch-mode Power Rectifier This ultrafast rectifier in the dual flag SO8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as www.onsemi.com common cathode, as common anode or in series as a function of board level layout. The exposed pad design provides low thermal resistance. ULTRAFAST RECTIFIER The clip attach design creates a package with very efficient die size to board area ratio. While thermal performance is nearly the same as the 8 AMPERES (4x2), 200 VOLTS DPAK package height and board footprint are less than half. 7,8 Features 1,2 New Package Provides Capability of Inspection and Probe After 5,6 3,4 Board Mounting Low Forward Voltage Drop MARKING DIAGRAM 175C Operating Junction Temperature C1 C1 NRV Prefix for Automotive and Other Applications Requiring 1 A1 C1 Unique Site and Control Change Requirements AECQ101 DFN8 5x6 A1 C1 8H200M Qualified and PPAP Capable (SO8FL) A2 AYWZZ C2 These are PbFree and HalideFree Devices CASE 506BT A2 C2 C2 C2 Mechanical Characteristics: 8H200M = Specific Device Code Case: Epoxy, Molded A = Assembly Location Epoxy Meets Flammability Rating UL 940 0.125 in. Y = Year Lead Finish: 100% Matte Sn (Tin) W = Work Week ZZ = Lot Traceability Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Applications Device Package Shipping Excellent Alternative to DPAK in SpaceConstrained Automotive NRVHP8H200MFDT1G DFN8 1500 / Applications (PbFree) Tape & Reel Output Rectification in Switching Power Supplies NRVHP8H200MFDT3G DFN8 5000 / Freewheeling Diode used with Inductive Loads (PbFree) Tape & Reel NRVHP8H200MFDWFT1G DFN8 1500 / (PbFree) Tape & Reel NRVHP8H200MFDWFT3G DFN8 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2018 Rev. 1 NRVHP8H200MFD/DNRVHP8H200MFD MAXIMUM RATINGS (per diode unless noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 200 R Average Rectified Forward Current I 4.0 A F(AV) (Rated V , T = 170C) R C Peak Repetitive Forward Current, I 8.0 A FRM (Rated V , Square Wave, 20 kHz, T = 169C) R C NonRepetitive Peak Surge Current I 80 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 10 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (per diode unless noted) Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 3.4 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS (per diode unless noted) Instantaneous Forward Voltage (Note 1) v V F (i = 4.0 Amps, T = 125C) 0.76 0.85 F J (i = 4.0 Amps, T = 25C) 0.88 1.0 F J (i = 6.0 Amps, T = 125C) 0.80 0.88 F J (i = 6.0 Amps, T = 25C) 0.92 1.05 F J (i = 8.0 Amps, T = 125C) 0.83 0.91 F J (i = 8.0 Amps, T = 25C) 0.94 1.1 F J Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 125C) 1.00 50 J (Rated dc Voltage, T = 25C) 0.012 0.5 J Reverse Recovery Time t 17 30 ns rr I = 4.0 A, V = 30 V, dl/dt = 200 A/ s, T = 25C F R J Reverse Recovery Time t 27 60 ns rr I = 4.0 A, V = 30 V, dl/dt = 200 A/ s, T = 125C F R J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2