NTS10100EMFS, NRVTS10100EMFS Very Low Leakage Trench-based Schottky Rectifier www.onsemi.com Features Fine Lithography Trenchbased Schottky Technology for Very Low TRENCH SCHOTTKY Leakage RECTIFIERS Fast Switching with Exceptional Temperature Stability 10 AMPERES Low Power Loss and Lower Operating Temperature 100 VOLTS Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance 1,2,3 5,6 High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING Qualified and PPAP Capable DIAGRAM These are PbFree and HalideFree Devices A C 1 TE1010 A Typical Applications AYWWZZ SO8 FLAT LEAD A Switching Power Supplies including Notebook / Netbook Adapters, CASE 488AA C Not Used ATX and Flat Panel Display STYLE 2 High Frequency and DCDC Converters TE1010 = Specific Device Code A = Assembly Location Freewheeling and ORing diodes Y = Year Reverse Battery Protection W = Work Week LED Lighting ZZ = Lot Traceability Instrumentation Mechanical Characteristics: ORDERING INFORMATION Case: Epoxy, Molded Device Package Shipping Epoxy Meets Flammability Rating UL 940 0.125 in. NTS10100EMFST1G SO8 FL 1500 / Lead Finish: 100% Matte Sn (Tin) NRVTS10100EMFST1G (PbFree) Tape & Reel Lead and Mounting Surface Temperature for Soldering Purposes: NTS10100EMFST3G SO8 FL 5000 / 260C Max. for 10 Seconds NRVTS10110EMFST3G (PbFree) Tape & Reel Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2018 Rev. 2 NTS10100EMFS/DNTS10100EMFS, NRVTS10100EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 10 A F(AV) (Rated V , T = 165C) R C Peak Repetitive Forward Current, I 20 A FRM (Rated V , Square Wave, 20 kHz, T = 163C) R C NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 5 A, T = 25C) 0.540 F J (i = 10 A, T = 25C) 0.650 0.720 F J (i = 5 A, T = 125C) 0.500 F J (i = 10 A, T = 125C) 0.570 0.610 F J Instantaneous Reverse Current (Note 1) i R (V = 70 V, T = 25C) 1.4 A R J (Rated dc Voltage, T = 25C) 5.0 50 A J (V = 70 V, T = 125C) 1.6 mA R J (Rated dc Voltage, T = 125C) 3.8 15 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2