X-On Electronics has gained recognition as a prominent supplier of NRVB860MFST3G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVB860MFST3G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NRVB860MFST3G ON Semiconductor

NRVB860MFST3G electronic component of ON Semiconductor
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Part No.NRVB860MFST3G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 8.0 A 60 V SCHOTTKY DIODE IN SO-8FL
Datasheet: NRVB860MFST3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.3547 ea
Line Total: USD 1773.5 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.3547

   
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We are delighted to provide the NRVB860MFST3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVB860MFST3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR860MFS, NRVB860MFS Switch-mode Power Rectifiers These stateoftheart devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection and Probe After MBR860MFS, NRVB860MFS THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 8 Amps, T = 125C) 0.60 0.72 F J (i = 8 Amps, T = 25C) 0.65 0.80 F J Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 25 75 J (Rated dc Voltage, T = 25C) 0.015 0.150 J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 100 100 10 10 T = 175C A T = 175C A 150C 1 1 150C 125C 25C 40C 125C 25C 40C 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (V) F F Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward Characteristics Characteristics 1.E+00 1.E+00 T = 175C T = 175C A A 1.E01 1.E01 T = 150C T = 150C A A 1.E02 1.E02 T = 125C T = 125C A A 1.E03 1.E03 1.E04 1.E04 T = 25C T = 25C 1.E05 1.E05 A A 1.E06 1.E06 1.E07 1.E07 1.E08 1.E08 T = 40C T = 40C A A 1.E09 1.E09 1.E10 1.E10 0 10 20 30 40 50 60 0 10 20 30 40 50 60 V , INSTANTANEOUS REVERSE VOLTAGE (V) V , INSTANTANEOUS REVERSE VOLTAGE (V) R R Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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