X-On Electronics has gained recognition as a prominent supplier of NRVB8H100MFSWFT3G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVB8H100MFSWFT3G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NRVB8H100MFSWFT3G ON Semiconductor

NRVB8H100MFSWFT3G electronic component of ON Semiconductor
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Part No.NRVB8H100MFSWFT3G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 8.0 A 100 V SCHOTTKY
Datasheet: NRVB8H100MFSWFT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 5000
Multiples : 5000
5000 : USD 0.5669
10000 : USD 0.5649
15000 : USD 0.563
20000 : USD 0.561
25000 : USD 0.559
30000 : USD 0.557
40000 : USD 0.5549
50000 : USD 0.4661
100000 : USD 0.3088
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MOQ : 1
Multiples : 1
1 : USD 1.83
10 : USD 0.8879
100 : USD 0.4954
500 : USD 0.392
1000 : USD 0.3138
2500 : USD 0.2838
5000 : USD 0.2747
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Shipping Restricted
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MOQ : 1
Multiples : 1
1 : USD 1.0235
5 : USD 0.5978
25 : USD 0.5373
38 : USD 0.4033
104 : USD 0.381
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We are delighted to provide the NRVB8H100MFSWFT3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVB8H100MFSWFT3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR8H100MFS, NRVB8H100MFS Switch -mode Power Rectifiers Features Low Power Loss / High Efficiency www.onsemi.com New Package Provides Capability of Inspection and Probe After Board Mounting SCHOTTKY BARRIER Guardring for Stress Protection RECTIFIERS Low Forward Voltage Drop 8 AMPERES 175C Operating Junction Temperature 100 VOLTS WF Suffix for Products with Wettable Flanks NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1,2,3 5,6 Qualified and PPAP Capable These are PbFree Devices MARKING Mechanical Characteristics: DIAGRAM Case: Epoxy, Molded A C Epoxy Meets Flammability Rating UL 940 0.125 in. 1 B8H100 A AYWZZ Lead Finish: 100% Matte Sn (Tin) SO8 FLAT LEAD A CASE 488AA C Not Used Lead and Mounting Surface Temperature for Soldering Purposes: STYLE 2 260C Max. for 10 Seconds B8H100 = Specific Device Code Device Meets MSL 1 Requirements A = Assembly Location Y = Year MAXIMUM RATINGS W = Work Week ZZ = Lot Traceability Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R ORDERING INFORMATION Average Rectified Forward Current I 8.0 A F(AV) Device Package Shipping (Rated V , T = 165C) R C MBR8H100MFST1G SO8 FL 1500 / Peak Repetitive Forward Current, I 16 A FRM (PbFree) Tape & Reel (Rated V , Square Wave, R 20 kHz, T = 162C) C MBR8H100MFST3G SO8 FL 5000 / NonRepetitive Peak Surge Current I 75 A (PbFree) Tape & Reel FSM (Surge Applied at Rated Load NRVB8H100MFST1G SO8 FL 1500 / Conditions Halfwave, Single (PbFree) Tape & Reel Phase, 60 Hz) NRVB8H100MFST3G SO8 FL 5000 / Storage Temperature Range T 65 to +175 C stg (PbFree) Tape & Reel Operating Junction Temperature T 55 to +175 C J NRVB8H100MFSWFT1G SO8 FL 1500 / Unclamped Inductive Switching E 75 mJ AS (PbFree) Tape & Reel Energy (10 mH Inductor, Nonrepetitive) NRVB8H100MFSWFT3G SO8 FL 5000 / ESD Rating (Human Body Model) 3B (PbFree) Tape & Reel ESD Rating (Machine Model) M4 For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specification device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2015 Rev. 2 MBR8H100MFS/DMBR8H100MFS, NRVB8H100MFS THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.2 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 8 Amps, T = 125C) 0.68 0.76 F J (i = 8 Amps, T = 25C) 0.81 0.90 F J Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 125C) 180 300 J (Rated dc Voltage, T = 25C) 0.06 2 J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 100 100 10 10 T = 175C A T = 175C A 150C 1 1 150C 125C 125C 25C 40C 25C 40C 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (V) F F Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward Characteristics Characteristics 1.E+00 1.E+00 1.E01 1.E01 1.E02 1.E02 T = 175C A T = 175C A 1.E03 1.E03 T = 150C A 1.E04 T = 150C A 1.E04 T = 125C A 1.E05 T = 125C A 1.E05 1.E06 1.E06 1.E07 T = 25C A 1.E07 1.E08 T = 25C A 1.E08 1.E09 1.E09 T = 40C 1.E10 A T = 40C A 1.E11 1.E10 1.E12 1.E11 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 V , INSTANTANEOUS REVERSE VOLTAGE (V) V , INSTANTANEOUS REVERSE VOLTAGE (V) R R Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics www.onsemi.com 2 I , INSTANTANEOUS REVERSE CURRENT (A) i , INSTANTANEOUS FORWARD R F CURRENT (A) I , INSTANTANEOUS REVERSE CURRENT (A) R i , INSTANTANEOUS FORWARD F CURRENT (A)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
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