DATA SHEET www.onsemi.com Surface Mount SCHOTTKY BARRIER Schottky Power Rectifier RECTIFIER SMA/SMB Power Surface Mount Package 2.0 AMPERES, 100 VOLTS MARKING MBRS2H100T3G, DIAGRAMS NBRS2H100T3G, A210 SMA NBRS2H100NT3G, AYWW CASE 403D MBRA2H100T3G, NRVBA2H100T3G, AYWW SMB NRVBA2H100NT3G B210 CASE 403A This device employs the Schottky Barrier principle in a metaltosilicon power rectifier. Features epitaxial construction with A210 = MBRA2H100T3G oxide passivation and metal overlay contact. Ideally suited for low NRVBA2H100T3G voltage, high frequency switching power supplies free wheeling B210 = MBRS2H100T3G NBRS2H100T3G diodes and polarity protection diodes. A = Assembly Location Y = Year Features WW = Work Week Compact Package with JBend Leads Ideal for Automated Handling = PbFree Package Highly Stable Oxide Passivated Junction (Note: Microdot may be in either location) GuardRing for Overvoltage Protection **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Low Forward Voltage Drop stamped in the package, the front side assembly code may be blank. NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* ORDERING INFORMATION Mechanical Characteristics Device Package Shipping Case: Molded Epoxy MBRA2H100T3G, SMA 5,000 / Epoxy Meets UL 94 V0 0.125 in NRVBA2H100T3G* (PbFree) Tape & Reel Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) MBRS2H100T3G, Cathode Polarity Band NBRS2H100T3G* SMB 2,500 / (PbFree) Tape & Reel NBRS2H100NT3G*, Lead and Mounting Surface Temperature for Soldering Purposes: NBRS2H100T3GVF01* 260C Max. for 10 Seconds NRVBA2H100NT3G* SMA 5,000 / Finish: All External Surfaces Corrosion Resistant and Terminal (PbFree) Tape & Reel Leads are Readily Solderable For information on tape and reel specifications, ESD Ratings: including part orientation and tape sizes, please Charged Device Model > 1000 V (Class C5) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Human Body Model = 3B These Devices are PbFree and are RoHS Compliant Device Meets MSL1 Requirements Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: January, 2022 Rev. 14 MBRS2H100/DMBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (T = 150C) 2.0 L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 130 Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) C/W JCL MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G 14 MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G 12 Thermal Resistance, JunctiontoAmbient (Note 2) R C/W JA MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G 75 MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G 71 Thermal Resistance, JunctiontoAmbient (Note 3) R C/W JA MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G 275 MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G 230 2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board. 3. Mounted with minimum recommended pad size 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Value T = 25C T = 125C Characteristic Symbol Unit J J v V Maximum Instantaneous Forward Voltage (Note 4) F 0.79 0.65 (i = 2.0 A) F Maximum Instantaneous Reverse Current (Note 4) I mA R (V = 100 V) 0.008 1.5 R 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. www.onsemi.com 2