Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA1H100, NRVBA1H100, NRVBA1H100N www.onsemi.com Employing the Schottky Barrier principle in a large area metaltosilicon power diode. State of the art geometry features SCHOTTKY BARRIER epitaxial construction with oxide passivation and metal overlay RECTIFIER contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications 1.0 AMPERES, 100 VOLTS where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with JBent Leads Rectangular Package for Automated Handling SMA Highly Stable Oxide Passivated Junction CASE 403D Low Forward Voltage Drop Guardring for Stress Protection 12 NRVBA Prefix for Automotive and Other Applications Requiring Cathode Anode Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING DIAGRAMS Compliant A110 Mechanical Characteristics: AYWW Case: Epoxy, Molded Weight: 70 mg (approximately) A110 = Device Code Finish: All External Surfaces Corrosion Resistant and Terminal A = Assembly Location** Leads are Readily Solderable Y = Year Lead and Mounting Surface Temperature for Soldering Purposes: WW = Work Week = PbFree Package 260C Max. for 10 Seconds (Note: Microdot may be in either location) Polarity: Cathode Lead Indicated by Polarity Band **The Assembly Location code (A) is front side ESD Ratings: optional. In cases where the Assembly Location is Machine Model = C stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. Human Body Model = 3B Device Meets MSL 1 Requirements ORDERING INFORMATION Device Package Shipping MBRA1H100T3G SMA 5,000 / (PbFree) Tape & Reel NRVBA1H100T3G* SMA 5,000 / (PbFree) Tape & Reel SMA 5,000 / NRVBA1H100NT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: December, 2019 Rev. 4 MBRA1H100/DMBRA1H100, NRVBA1H100, NRVBA1H100N MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (T = 167C) 1.0 L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 50 Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 14 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 75 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 280 C/W JA 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 6 mm copper, 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.76 (I = 1.0 A, T = 25C) F J 0.84 (I = 2.0 A, T = 25C) F J 0.61 (I = 1.0 A, T = 125C) F J 0.68 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 40 A J (Rated dc Voltage, T = 125C) 0.5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. www.onsemi.com 2