NRVBM120ET3G ON Semiconductor

MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G Surface Mount MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 130C) 1.0 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 20 kHz, T = 135C) 2.0 R C NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 65 to 150 C stg Operating Junction Temperature T 65 to 150 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Anode) (Note 1) R 35 C/W tjl Thermal Resistance JunctiontoTab (Cathode) (Note 1) R 23 tjtab Thermal Resistance JunctiontoAmbient (Note 1) R 277 tja 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 V T = 25C T = 100C V F J J (I = 0.1 A) 0.455 0.360 F (I = 1.0 A) 0.530 0.455 F (I = 2.0 A) 0.595 0.540 F Maximum Instantaneous Reverse Current (Note 2), See Figure 4 I T = 25C T = 100C A R J J (V = 20 V) 10 1600 R (V = 10 V) 1.0 500 R (V = 5.0 V) 0.5 300 R 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%.