NRVBB41H100CTT4G ON Semiconductor

Switch-mode Power Rectifier 100 V, 40 A MBR41H100CT, NRVBB41H100CT Series www.onsemi.com Features and Benefits 1 Low Forward Voltage: 0.67 V 125C 2, 4 Low Power Loss/High Efficiency 3 High Surge Capacity 4 MARKING 175C Operating Junction Temperature DIAGRAMS 40 A Total (20 A Per Diode Leg) GuardRing for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring TO220 CASE 221A Unique Site and Control Change Requirements AECQ101 AYWW STYLE 6 Qualified and PPAP Capable B41H100x AKA These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant 3 MBR41H100CTH and MBRB41H100CT1H are HalideFree 2 D PAK3 CASE 418B Applications AYWW STYLE 3 B41H100G Power Supply Output Rectification AKA 4 Power Management 1 Instrumentation 3 Mechanical Characteristics: 4 Case: Epoxy, Molded 2 I PAK (TO262) AYWW Epoxy Meets UL 94 V0 0.125 in CASE 418D B41H100x Weight (Approximately): 1.9 Grams (TO220) STYLE 3 AKA 2 1.7 Grams (D PAK3) 1.5 Grams (TO262) Finish: All External Surfaces Corrosion Resistant and Terminal 1 2 Leads are Readily Solderable 3 A = Assembly Location Lead Temperature for Soldering Purposes: Y = Year 260C Max. for 10 Seconds WW = Work Week x = G or H G = PbFree Package H = HalideFree Package AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2020 Rev. 10 MBR41H100CT/DMBR41H100CT, NRVBB41H100CT Series MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 150C 20 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 145C 40 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 350 Operating Junction Temperature (Note 1) T +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 10 and 11) W 400 mJ AVAL ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase R 2.0 JC JunctiontoAmbient R 70 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 20 A, T = 25C) 0.80 F C (I = 20 A, T = 125C) 0.67 F C (I = 40 A, T = 25C) 0.90 F C (I = 40 A, T = 125C) 0.76 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 125C) 10 C (Rated DC Voltage, T = 25C) 0.01 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2