Schottky Power Rectifier, Switch Mode, 10 A, 35 V MBRD1035CTL, NRVBD1035VCTL, www.onsemi.com SBRD81035CTL Series The MBRD1035CTL employs the Schottky Barrier principle in a SCHOTTKY BARRIER large area metaltosilicon power diode. State of the art geometry RECTIFIER features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency 10 AMPERES switching power supplies, free wheeling diode and polarity protection 35 VOLTS diodes. Features Highly Stable Oxide Passivated Junction Guardring for Stress Protection Matched Dual Die Construction DPAK May be Paralleled for High Current Output CASE 369C High dv/dt Capability Short Heat Sink Tap Manufactured Not Sheared 1 4 Very Low Forward Voltage Drop 3 Epoxy Meets UL 94 V0 0.125 in SBRD8 and NRVBD Prefix for Automotive and Other Applications MARKING DIAGRAM Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable AYWW These Devices are PbFree, Halogen Free/BFR Free and are RoHS B10 Compliant 35CLG Mechanical Characteristics: A = Assembly Location* Case: Epoxy, Molded Y = Year Weight: 0.4 Gram (Approximately) WW = Work Week B1035CL = Device Code Finish: All External Surfaces Corrosion Resistant and Terminal G = PbFree Package Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: * The Assembly Location Code (A) is front side 260C Max. for 10 Seconds optional. In cases where the Assembly Location is ESD Rating: stamped in the package bottom (molding ejecter Human Body Model = 3B (> 8 kV) pin), the front side assembly code may be blank. Machine Model = C (> 400 V) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 13 MBRD1035CTL/DMBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 35 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (T = 115C) C Per Leg 5.0 Per Package 10 Peak Repetitive Forward Current I A FRM (Square Wave, Duty = 0.5, T = 115C) C Per Leg 10 NonRepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Per Package 50 Storage / Operating Case Temperature T T 55 to +150 C stg, c Operating Junction Temperature (Note 1) T 55 to +150 C J Voltage Rate of Change (Rated V , T = 25C) dv/dt 10,000 V/ s R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, JunctiontoCase R C/W JC Per Leg 3.0 Thermal Resistance, JunctiontoAmbient (Note 2) R C/W JA Per Leg 137 2. Rating applies when using minimum pad size, FR4 PC Board ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) (See Figure 2) V V F Per Leg (I = 5 Amps, T = 25C) 0.47 F J (I = 5 Amps, T = 100C) 0.41 F J (I = 10 Amps, T = 25C) 0.56 F J (I = 10 Amps, T = 100C) 0.55 F J Maximum Instantaneous Reverse Current (Note 3) (See Figure 4) I mA R Per Leg (V = 35 V, T = 25C) 2.0 R J (V = 35 V, T = 100C) 30 R J (V = 17.5 V, T = 25C) 0.20 R J (V = 17.5 V, T = 100C) 5.0 R J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0% www.onsemi.com 2