NRVBD1035CTL Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a www.onsemi.com large area metaltosilicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal SCHOTTKY BARRIER overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection RECTIFIER diodes. 10 AMPERES Features 35 VOLTS Highly Stable Oxide Passivated Junction Guardring for Stress Protection 1 Matched Dual Die Construction 4 May be Paralleled for High Current Output 3 High dv/dt Capability Short Heat Sink Tap Manufactured Not Sheared Very Low Forward Voltage Drop 4 Epoxy Meets UL 94 V0 0.125 in This is a PbFree Device 2 1 3 Mechanical Characteristics: DPAK CASE 369C Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds AYWW B10 35CLG A = Assembly Location Y = Year WW = Work Week B1035CL = Device Code G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: July, 2019 Rev. 1 NRVBD1035CTL/DNRVBD1035CTL MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 35 V RRM V Working Peak Reverse Voltage RWM V DC Blocking Voltage R Average Rectified Forward Current Per Leg I 5.0 A O 10 (At Rated V , T = 115C) Per Package R C Peak Repetitive Forward Current Per Leg I 10 A FRM (At Rated V , Square Wave, 20 kHz, T = 115C) R C NonRepetitive Peak Surge Current Per Package I 50 A FSM (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature T T 55 to +150 C stg, c Operating Junction Temperature (Note 1) T 55 to +150 C J Voltage Rate of Change (Rated V , T = 25C) dv/dt 10,000 V/ s R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoCase Per Leg R 3.0 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) Per Leg R 137 C/W JA ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) V V F (See Figure 2) Per Leg 0.47 I = 5 Amps, T = 25C F J 0.41 I = 5 Amps, T = 100C F J 0.56 I = 10 Amps, T = 25C F J 0.55 I = 10 Amps, T = 100C F J Maximum Instantaneous Reverse Current (Note 3) I mA R (See Figure 4) Per Leg 2.0 (V = 35 V, T = 25C) R J 30 (V = 35 V, T = 100C) R J 0.20 (V = 17.5 V, T = 25C) R J 5.0 (V = 17.5 V, T = 100C) R J 2. Rating applies when using minimum pad size, FR4 PC Board 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping NRVBD1035CTLT4G DPAK 2500 Units / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2