NRVTS1260EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Leakage SCHOTTKY BARRIER Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature RECTIFIERS Higher Efficiency for Achieving Regulatory Compliance 12 AMPERES Low Thermal Resistance 60 VOLTS High Surge Capability NRV Prefix for Automotive and Other Applications Requiring 1,2,3 5,6 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable MARKING These are PbFree and HalideFree Devices DIAGRAM Typical Applications A C Switching Power Supplies including Wireless, Smartphone and 1 A TE1260 AYWWZZ Notebook Adapters SO8 FLAT LEAD A CASE 488AA High Frequency and DCDC Converters C Not Used STYLE 2 Freewheeling and ORing diodes TE1260 = Specific Device Code Reverse Battery Protection A = Assembly Location Instrumentation Y = Year W = Work Week ZZ = Lot Traceability Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in. ORDERING INFORMATION Lead Finish: 100% Matte Sn (Tin) Device Package Shipping Lead and Mounting SurfaceTemperature for Soldering Purposes: 260C Max. for 10 Seconds NRVTS1260EMFST1G SO8 FL 1500 / (PbFree) Tape & Reel Device Meets MSL 1 Requirements NRVTS1260EMFST3G SO8 FL 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 1 NRVTS1260EMFS/DNRVTS1260EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 60 R Average Rectified Forward Current I 12 A F(AV) (Rated V , T = 162C) R C Peak Repetitive Forward Current, I 24 A FRM (Rated V , Square Wave, 20 kHz, T = 161C) R C NonRepetitive Peak Surge Current I 210 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 200 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) v V F (i = 6.0 Amps, T = 25C) 0.44 F J (i = 12 Amps, T = 25C) 0.54 0.60 F J (i = 6.0 Amps, T = 125C) 0.35 F J (i = 12 Amps, T = 125C) 0.49 0.57 F J Instantaneous Reverse Current (Note 1) i R (Rated dc Voltage, T = 25C) 50 A J (Rated dc Voltage, T = 125C) 5.4 15 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2