TSF10U60C C0G Taiwan Semiconductor

TSF10U60C Taiwan Semiconductor 10A, 60V Low V Trench Schottky Rectifier F FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 10 A F Low forward voltage V 60 V RRM Low power loss/ high efficiency High forward surge capability I 150 A FSM Compliant RoHS T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package ITO-220AB Configuration Dual dies APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N m maximum ITO-220AB Polarity: As marked Weight: 1.70g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL UNIT TSF10U60C Marking code on the device TSF10U60C V Repetitive peak reverse voltage 60 V RRM V Reverse voltage, total rms value 42 V R(RMS) V Isolation voltage from terminal to heatsink t = 1 min 2000 V AC I Forward current 10 A F Surge peak forward current, 8.3ms single half sine- I 150 A FSM wave superimposed on rated load Critical rate of rise of off-state voltage dv/dt 10,000 V/s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: F2105 TSF10U60C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 4 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 5A, T = 25C 0.44 0.48 V F J (1) Forward voltage per diode I = 10A, T = 25C V 0.54 0.62 V F J F I = 5A, T = 125C 0.39 0.42 V F J T = 25C - 500 A J (2) Reverse current rated V per diode I R R T = 125C - 100 mA J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSF10U60C ITO-220AB 50 / Tube 2 Version: F2105