TSF30H200CM C0G Taiwan Semiconductor

creat by AR TSF30H100C thru TSF30H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A TSF30H TSF30H TSF30H TSF30H PARAMETER SYMBOL UNIT 100C 120C 150C 200C Maximum repetitive peak reverse voltage V 100 120 150 200 V RRM per device 30 Maximum average forward rectified I A F(AV) current per diode 15 Peak forward surge current, 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode Voltage rate of change (Rated V ) dV/dt 10000 V/s R V Isolation voltage from terminal to heatsink t = 1 min 1500 V AC Typ Max Typ Max Typ Max Typ Max T = 25C 0.76 0.82 0.80 0.88 0.81 0.90 0.84 0.92 J I = 15A F T = 125C 0.64 0.69 0.65 0.73 0.68 0.77 0.70 0.79 Instantaneous forward voltage J V V F per diode ( Note1 ) T = 25C 0.86 0.92 0.90 0.96 0.89 0.98 0.91 1.00 J I = 30A F T = 125C 0.75 0.80 0.78 0.86 0.77 0.86 0.80 0.89 J T = 25C 150 A Instantaneous reverse current per diode at rated J I R reverse voltage T = 125C 20 mA J Typical thermal resistance R 4.5 C/W JC Operating junction temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with pulse width=300s, 1% duty cycle Document Number: DS D1411039 Version: G14TSF30H100C thru TSF30H200C Taiwan Semiconductor ORDERING INFORMATION PACKING CODE PART NO. PACKING CODE PACKAGE PACKING SUFFIX TSF30HXXXC C0 G ITO-220AB 50 / Tube (Note 1) Note 1:xx defines voltage from 100V (TSF30H100C) to 200V (TSF30H200C) EXAMPLE PREFERRED PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX TSF30H120C C0G TSF30H120C C0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL FORWARD CHARACTERISTICS 40 10 0 TSF30H100C 35 T =150C j 30 10 T =125C j 25 20 1 15 T =25C j 10 0.1 WITH HEATSINK 5 3in x 5in x 0.25in Al-Plate 0 0.0 1 0 25 50 75 100 12 5 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) o CASE TEMPERATURE ( C) FIG. 4 TYPICAL FORWARD CHARACTERISTICS FIG. 3 TYPICAL REVERSE CHARACTERISTICS 10 0 10 0 TSF30H150C TSF30H120C T =150C j 10 10 T =150C j T =125C j T =125C j 1 1 T =100C j T =100C j T =25C 0.1 j 0.1 T =25C j 0.0 1 0.0 1 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) Document Number: DS D1411039 Version: G14 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A)