TSS40U Taiwan Semiconductor

TSS40U Taiwan Semiconductor Small Signal Product Surface Mount Schottky Barrier FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - Low capacitance - Low forward voltage drop - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 0603 MECHANICAL DATA - Case: 0603 - Terminal: Gold plated, solderable per MIL-STD-750, method 2026 - Polarity: Indicated by cathode band - Weight: 3 mg (approximately) - Marking code: BC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Repetitive Peak Reverse Voltage V 40 V RRM DC Reverse Voltage V 40 V R V RMS Reverse Voltage 28 V R(RMS) Average Forward Current I 200 mA O Peak Forward Surge Current 8.3ms Single Half I 600 mA FSM Sine-Wave Superimposed on Rate Load Power Dissipation 150 Pd mW I = 1.0 mA Forward Voltage 0.38 F V V F I = 40 mA 1.0 F V = 30 V Reverse Leakage Current I 0.2 A R R Typical Capacitance Between Terminals C 5 pF J V = 0 V , f = 1.0 MHz Reverse Voltage R Reverse Recovery Time t 5 ns rr ( I = I = 10mA, I = 0.1I , R =100 ) F R RR R L Junction Temperature T -65 to +125 C J Storage Temperature T -65 to +125 C STG Version: C1601TSS40U Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 2 Reverse Characteristics Fig.1 Forward Characteristics 100000 1000 125C 10000 75C 75C 100 125C 1000 10 25C 100 25C -25 C 1 -25C 10 o -25 C 1 0.1 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 Reverse Voltage (V) Forward Voltage (V) Fig. 3 F Fig. 3 Capacitance Between Terminals Characteristics Fig. 4 4 120 Mounting on glass epoxy PCBs 100 3 80 2 60 40 1 20 0 0 0 10 20 30 40 0 25 50 75 100 125 150 Reverse Voltage (V) Ambient Temperature (C) Version: C1601 Capacitance Between Terminals (pF) Forward Current (mA) Average Forward Current (%) Reverse Current (nA)