X-On Electronics has gained recognition as a prominent supplier of NRVHP8H200MFDWFT1G Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVHP8H200MFDWFT1G Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

NRVHP8H200MFDWFT1G ON Semiconductor

NRVHP8H200MFDWFT1G electronic component of ON Semiconductor
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Part No.NRVHP8H200MFDWFT1G
Manufacturer: ON Semiconductor
Category: Rectifiers
Description: Rectifiers PUF 4A 200V IN SO-8FL DUAL DFN-8
Datasheet: NRVHP8H200MFDWFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.6993 ea
Line Total: USD 1048.95 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.6993
4500 : USD 0.6295

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.7564

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6749
10 : USD 1.4616
100 : USD 1.1219
500 : USD 0.8921
1000 : USD 0.8153
1500 : USD 0.6676

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NRVHP8H200MFDWFT1G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVHP8H200MFDWFT1G and other electronic components in the Rectifiers category and beyond.

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NRVHP8H200MFD Switch-mode Power Rectifier This ultrafast rectifier in the dual flag SO8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as www.onsemi.com common cathode, as common anode or in series as a function of board level layout. The exposed pad design provides low thermal resistance. ULTRAFAST RECTIFIER The clip attach design creates a package with very efficient die size to board area ratio. While thermal performance is nearly the same as the 8 AMPERES (4x2), 200 VOLTS DPAK package height and board footprint are less than half. 7,8 Features 1,2 New Package Provides Capability of Inspection and Probe After 5,6 3,4 Board Mounting Low Forward Voltage Drop MARKING DIAGRAM 175C Operating Junction Temperature C1 C1 NRV Prefix for Automotive and Other Applications Requiring 1 A1 C1 Unique Site and Control Change Requirements AECQ101 DFN8 5x6 A1 C1 8H200M Qualified and PPAP Capable (SO8FL) A2 AYWZZ C2 These are PbFree and HalideFree Devices CASE 506BT A2 C2 C2 C2 Mechanical Characteristics: 8H200M = Specific Device Code Case: Epoxy, Molded A = Assembly Location Epoxy Meets Flammability Rating UL 940 0.125 in. Y = Year Lead Finish: 100% Matte Sn (Tin) W = Work Week ZZ = Lot Traceability Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Applications Device Package Shipping Excellent Alternative to DPAK in SpaceConstrained Automotive NRVHP8H200MFDT1G DFN8 1500 / Applications (PbFree) Tape & Reel Output Rectification in Switching Power Supplies NRVHP8H200MFDT3G DFN8 5000 / Freewheeling Diode used with Inductive Loads (PbFree) Tape & Reel NRVHP8H200MFDWFT1G DFN8 1500 / (PbFree) Tape & Reel NRVHP8H200MFDWFT3G DFN8 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2018 Rev. 1 NRVHP8H200MFD/DNRVHP8H200MFD MAXIMUM RATINGS (per diode unless noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 200 R Average Rectified Forward Current I 4.0 A F(AV) (Rated V , T = 170C) R C Peak Repetitive Forward Current, I 8.0 A FRM (Rated V , Square Wave, 20 kHz, T = 169C) R C NonRepetitive Peak Surge Current I 80 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 10 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (per diode unless noted) Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 3.4 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS (per diode unless noted) Instantaneous Forward Voltage (Note 1) v V F (i = 4.0 Amps, T = 125C) 0.76 0.85 F J (i = 4.0 Amps, T = 25C) 0.88 1.0 F J (i = 6.0 Amps, T = 125C) 0.80 0.88 F J (i = 6.0 Amps, T = 25C) 0.92 1.05 F J (i = 8.0 Amps, T = 125C) 0.83 0.91 F J (i = 8.0 Amps, T = 25C) 0.94 1.1 F J Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 125C) 1.00 50 J (Rated dc Voltage, T = 25C) 0.012 0.5 J Reverse Recovery Time t 17 30 ns rr I = 4.0 A, V = 30 V, dl/dt = 200 A/ s, T = 25C F R J Reverse Recovery Time t 27 60 ns rr I = 4.0 A, V = 30 V, dl/dt = 200 A/ s, T = 125C F R J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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