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They have half the rr o C Operating Temperature 175 recovery time of ultrafast diodes and are silicon nitride Reverse Voltage Up To 600V passivated ion-implanted epitaxial planar construction. Avalanche Energy Rated These devices are intended for use as freewheeling/clamping diodes and rectiers in a variety of Planar Construction switching power supplies and other power switching applications. Their low stored charge and hyperfast soft Applications recovery minimize ringing and electrical noise in many Switching Power Supplies power switching circuits reducing power loss in the switching transistors. Power Switching Circuits Formerly developmental type TA49059. General Purpose Ordering Information Packaging JEDEC TO-220AC PART NUMBER PACKAGE BRAND RHRP840 TO-220AC RHRP840 ANODE RHRP860 TO-220AC RHRP860 CATHODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RHRP840 RHRP860 UNITS Peak Repetitive Reverse Voltage .V 400 600 V RRM Working Peak Reverse Voltage V 400 600 V RWM DC Blocking Voltage V 400 600 V R Average Rectied Forward Current . I 88 A F(AV) o (T = 150 C) C Repetitive Peak Surge Current . I 16 16 A FRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current .I 100 100 A FSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation P 75 75 W D Avalanche Energy (See Figures 10 and 11) .E 20 20 mJ AVL o Operating and Storage Temperature . T , T -65 to 175 -65 to 175 C STG J 2002 Fairchild Semiconductor Corporation RHRP840, RHRP860 Rev. B