RS1AFA, NRVHPRS1AFA Series Surface Mount Fast Recovery Rectifiers 0.8 A, 50 V 1000 V www.onsemi.com Features Glass Passivated Chip Junction Fast Switching for High Efficiency 1 2 Cathode Anode High Surge Capacity Low Forward Voltage: 1.3 V Maximum UL Flammability 94V0 Classification MSL 1 per JSTD020 2 RoHS Compliant / Green Molding Compound Industrial Device Qualified per AECQ101 Standards 1 NRVHP Prefix for Automotive and Other Applications Requiring SOD123FA Unique Site and Control Change Requirements AECQ101 CASE 425AB Qualified and PPAP Capable *See authorized use policy (Color Band Denotes Cathode) ORDERING INFORMATION Part Number Top Mark Package Packing Method RS1AFA RAL SOD123FA Tape and Reel RS1BFA RBL SOD123FA Tape and Reel RS1DFA RDL SOD123FA Tape and Reel RS1GFA RGL SOD123FA Tape and Reel RS1JFA RJL SOD123FA Tape and Reel RS1KFA RKL SOD123FA Tape and Reel RS1MFA RML SOD123FA Tape and Reel NRVHPRS1AFA RAL SOD123FA Tape and Reel NRVHPRS1BFA RBL SOD123FA Tape and Reel NRVHPRS1DFA RDL SOD123FA Tape and Reel NRVHPRS1GFA RGL SOD123FA Tape and Reel NRVHPRS1JFA RJL SOD123FA Tape and Reel NRVHPRS1KFA RKL SOD123FA Tape and Reel NRVHPRS1MFA RML SOD123FA Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2018 Rev. 2 RS1AFA/DRS1AFA, NRVHPRS1AFA Series Table 1. ABSOLUTE MAXIMUM RATINGS Values are at T = 25C unless otherwise noted. A Value RS1 RS1 RS1 RS1 RS1 RS1 RS1 AFA BFA DFA GFA JFA KFA MFA Symbol Parameter Unit V Repetitive Peak Reverse Voltage 50 100 200 400 600 800 1000 V RRM V RMS Reverse Voltage 35 70 140 280 420 560 700 V RMS V DC Blocking Voltage 50 100 200 400 600 800 1000 V R I Average Forward Rectified Current 0.8 A F(AV) I Peak Forward Surge Current: 8.3 ms Single 30 A FSM Half SineWave Superimposed on Rated Load T Operating Junction Temperature Range 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. THERMAL CHARACTERISTICS (Note 1) Symbol Parameter Value Unit Typical Thermal Characteristics, JunctiontoLead 32 C/W JL R Typical Thermal Resistance, JunctiontoAmbient 105 C/W JA 1. Device mounted on 5 mm x 5 mm Cu pad PCB. Table 3. ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min Typ Max Unit V Instantaneous Forward Volt- I = 0.8 A 1.3 V F F age (Note 2) I Reverse Current at Rated V T = 25C 5 A R R J T = 125C 50 J C Junction Capacitance V = 4 V, f = 1 MHz 10 pF J R T Reverse Recovery Time I = 0.5 A, RS1AFA, RS1BFA, RS1DFA 150 ns rr F I = 1 A, R RS1GFA, RS1JFA 250 I = 0.25 A rr RS1KFA, RS1MFA 500 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 s, 1% duty cycle www.onsemi.com 2