VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum of 260 C Material categorization: for definitions of compliance 2 3 please see www.vishay.com/doc 99912 1 APPLICATIONS 13 TO-252AA (D-PAK) -- Anode Anode Output rectification and freewheeling diode in inverters, choppers and converters PRODUCT SUMMARY Input rectifications where severe restrictions on Package TO-252AA (D-PAK) conducted EMI should be met I 8 A F(AV) DESCRIPTION V 200 V, 400 V, 600 V R V at I 1.2 V F F The VS-8EWF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time, I 150 A FSM low forward voltage drop and low leakage current. t 55 ns rr The glass passivation ensures stable reliable operation in T max. 150 C J the most severe temperature and power cycling conditions. Diode variation Single die This series is designed and qualified for industrial level. Snap factor 0.5 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 8 A F(AV) V 200 to 600 V RRM I 150 A FSM V 8 A, T = 25 C 1.2 V F J t 1 A, 100 A/s 55 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-8EWF02SPbF 200 300 VS-8EWF04SPbF 400 500 3 VS-8EWF06SPbF 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 96 C, 180 conduction half sine wave 8 F(AV) C 10 ms sine pulse, rated V applied 125 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated V applied 78 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 110 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A s Revision: 16-Jan-17 Document Number: 94108 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 8 A, T = 25 C 1.2 V FM J Forward slope resistance r 16 m t T = 150 C J Threshold voltage V 1.13 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 3 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 200 ns FM rr I at 8 A t F pk rr Reverse recovery current I 25 A/s 2.6 A rr t t a b t T = 25 C J di Reverse recovery charge Q 0.25 C rr dt Q rr I Snap factor S 0.5 rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Typical thermal resistance, (1) R 50 thJA junction to ambient (PCB mount) 1g Approximate weight 0.03 oz. Marking device Case style TO-252AA (D-PAK) 8EWF06S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note AN-994 Revision: 16-Jan-17 Document Number: 94108 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000