333 3 VS-8DKH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt FEATURES 11 22 Hyperfast recovery time, reduced Q , and soft rr 33 recovery 4 175 C maximum operating junction temperature 88 Specific for output and snubber operation 77 66 Low forward voltage drop 55 Low leakage current Meets MSL level 1 per J-STD-020, LF maximum peak FlatPAK 5 x 6 of 260 C 1, 2 7, 8 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3, 4 5, 6 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically LINKS TO ADDITIONAL RESOURCES designed with optimized performance of forward voltage drop and hyperfast recovery time. 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS These devices are intended for use in snubber, boost, I 2 x 4 A F(AV) piezo-injection, as high frequency rectifiers, and V 200 V freewheeling diodes. R V at I 0.7 V F F The extremely optimized stored charge and low recovery t 25 ns rr (typ.) current minimize the switching losses and reduce power T max. 175 C dissipation in the switching element. J Package FlatPAK 5 x 6 MECHANICAL DATA Circuit configuration Separated cathode Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002, meets JESD 201 class 2 whisker test ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Peak repetitive reverse voltage V 200 V RRM T = 170 C, DC Solderpad Average rectified forward current per device I 8 F(AV) T = 169 C, D = 0.5 Solderpad A per device 173 Non-repetitive peak surge current I T = 25 C, 10 ms sinusoidal pulse FSM J per diode 87 Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 4 A - 0.87 0.96 V F Forward voltage, per diode V F I = 4 A, T = 150 C - 0.7 0.78 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 7 80 J R R Junction capacitance C V = 200 V - 19 - pF T R Revision: 29-Jan-2021 Document Number: 96090 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-8DKH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 20 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -17- J T = 125 C - 29 - J I = 4 A F T = 25 C - 2.1 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 18 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1)(2) Thermal resistance, junction to ambient, per diode R - 89 103 thJA C/W (3) Thermal resistance, junction to mount, per diode R -1.8 2.1 thJM Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/ R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink Revision: 29-Jan-2021 Document Number: 96090 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000