VS-80PF(R)...(W) High Voltage Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A FEATURES 80PF(R)... 80PF(R)...W High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Wire version available Low thermal resistance Designed and qualified for multiple level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DO-5 (DO-203AB) DO-5 (DO-203AB) TYPICAL APPLICATIONS Battery charges Converters PRIMARY CHARACTERISTICS Power supplies I 80 A F(AV) Machine tool controls Package DO-5 (DO-203AB) Welding Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 80 A I F(AV) T 123 C C I 126 A F(RMS) 50 Hz 1200 I A FSM 60 Hz 1250 50 Hz 7100 2 2 I t A s 60 Hz 6450 V Range 1400 to 1600 V RRM T -55 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 150 C J CODE V V mA 140 1400 1650 VS-80PF(R)...(W) 4.5 160 1600 1900 Revision: 11-Jan-18 Document Number: 93527 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-80PF(R)...(W) High Voltage Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 80 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 123 C Maximum RMS forward current I 126 A F(RMS) t = 10 ms 1200 No voltage reapplied t = 8.3 ms 1250 Maximum peak, one-cycle forward, I A FSM non-repetitive surge current t = 10 ms 1000 100 % V RRM reapplied t = 8.3 ms 1050 Sinusoidal half wave, initial T = 150 C t = 10 ms J 7100 No voltage reapplied t = 8.3 ms 6450 2 2 2 Maximum I t for fusing I t A s t = 10 ms 5000 100 % V RRM reapplied t = 8.3 ms 4550 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.73 V F(TO) F(AV) F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 3.0 m f F(AV) F(AV) J J slope resistance Maximum forward voltage drop V I = 220 A, T = 25 C, t = 400 s rectangular wave 1.46 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and T , T -55 to 180 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.30 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.25 thCS case to heatsink 3.4 (1) Not lubricated threads, tighting on nut (30) 2.3 (1) Lubricated threads, tighting on nut (20) N m Allowable mounting torque (lbf in) 4.2 (2) Not lubricated threads, tighting on Hexagon (37) 3.2 (2) Lubricated threads, tighting on Hexagon (28) 15.8 g Approximate weight 0.56 oz. Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB) Notes (1) Recommended for pass-through holes (2) Torque must be applicable only to Hexagon and not to plastic structure, recommended for holed heatsink R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.14 0.10 120 0.16 0.17 90 0.21 0.22 T = T maximum K/W J J 60 0.30 0.31 30 0.50 0.50 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93527 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000