333 3 VS-6ESU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 6 A FRED Pt FEATURES eSMP Series Ultra fast recovery time, reduced Q , and rr soft recovery K 175 C maximum operating junction temperature Anode 1 K For PFC, CRM snubber operation Cathode Anode 2 Low forward voltage drop 1 Low leakage current 2 Meets MSL level 1, per J-STD-020, LF maximum peak SMPC (TO-277A) of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 3D Models State of the art ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control I 6 A F(AV) guarantee the best overall performance, ruggedness, and V 600 V R reliability characteristics. V at I 0.95 V F F These devices are intended for use in PFC, boost, lighting, t 42 ns rr (typ.) in the AC/DC section of SMPS, freewheeling and clamp T max. 175 C J diodes. Package SMPC (TO-277A) The extremely optimized stored charge and low recovery Circuit configuration Single current minimize the switching losses and reduce power dissipation in the switching element and snubbers. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 150 C 6 F(AV) Sp A Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 6 A - 1.10 1.30 V F Forward voltage V F I = 6 A, T = 150 C - 0.95 1.15 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - 25 150 J R R Junction capacitance C V = 600 V - 8 - pF T R Revision: 19-Jan-2021 Document Number: 94987 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-6ESU06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 42 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 60 F R rr Reverse recovery time t ns rr T = 25 C -58 - J T = 125 C - 85 - J I = 6 A F T = 25 C - 10 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 15 - J V = 400 V R T = 25 C - 290 - J Reverse recovery charge Q nC rr T = 125 C - 620 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, junction to mount R -2.4 3.5 C/W thJM 0.1 g Approximate weight 0.0035 oz. Marking device Case style SMPC (TO-277A) NEU6 100 100 175 C 150 C 10 10 125 C 1 T = 175 C J 0.1 T = 150 C J 1 25 C T = 125 C J 0.01 T = 25 C J T = -40 C J 0.001 0.1 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Jan-2021 Document Number: 94987 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R