VS-8TQ080SPbF, VS-8TQ100SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base 175 C T operation J cathode Low forward voltage drop 2 High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 2 1 TO-263AB (D PAK) Guard ring for enhanced ruggedness and long N/C Anode term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY AEC-Q101 qualified 2 Package TO-263AB (D PAK) Material categorization: for definitions of compliance I 8 A please see www.vishay.com/doc 99912 F(AV) V 80 V, 100 V R DESCRIPTION V at I 0.72 V F F The VS-8TQ... Schottky rectifier series has been optimized I max. 7 mA at 125 C RM for low reverse leakage at high temperature. The proprietary T max. 175 C J barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching Diode variation Single die power supplies, converters, freewheeling diodes, and E 7.5 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 8 A F(AV) V Range 80, 100 V RRM I t = 5 s sine 850 A FSM p V 8 A , T = 125 C 0.58 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-8TQ080SPbFVS-8TQ100SPbFUNITS Maximum DC reverse voltage V R 80 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 157 C, rectangular waveform 8 A F(AV) C See fig. 5 5 s sine or 3 s rect. pulse 850 Maximum peak one cycle Following any rated load non-repetitive surge current I condition and with rated A FSM See fig. 7 10 ms sine or 6 ms rect. pulse V applied 230 RRM Non-repetitive avalanche energy E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 09-Jul-14 Document Number: 94266 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8TQ080SPbF, VS-8TQ100SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 8 A 0.72 T = 25 C J 16 A 0.88 Maximum forward voltage drop (1) V V FM See fig. 1 8 A 0.58 T = 125 C J 16 A 0.69 T = 25 C 0.55 J Maximum reverse leakage current I (1) V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 500 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and T , T -55 to +175 C J Stg storage temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 8TQ080S 2 Marking device Case style D PAK 8TQ100S Revision: 09-Jul-14 Document Number: 94266 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000