VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Base cathode Popular D-PAK outline 4, 2 Small foot print, surface mountable Low forward voltage drop High frequency operation 1 3 D-PAK (TO-252AA) Anode Anode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package D-PAK (TO-252AA) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C I 3.0 A F(AV) V 20 V, 30 V, 40 V R DESCRIPTION V at I 0.49 V F F The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF I 20 mA at 125 C RM surface mount Schottky rectifier has been designed for T max. 150 C J applications requiring low forward drop and small foot prints Diode variation Single die on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, E 8 mJ AS battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 20 to 40 V RRM I t = 5 s sine 490 A FSM p V 3 Apk, T = 125 C 0.49 V F J T - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRD320PbF VS-MBRD330PbF VS-MBRD340PbF UNITS Maximum DC reverse voltage V R 20 30 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 133 C, rectangular waveform 3.0 F(AV) L Following any rated load 5 s sine or 3 s rect. pulse 490 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 75 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 16 mH 8.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94313 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Schottky Rectifier, 3.0 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 3 A 0.48 0.6 T = 25 C J 6 A 0.58 0.7 Maximum forward voltage drop (1) V V FM See fig. 1 3 A 0.41 0.49 T = 125 C J 6 A 0.55 0.625 T = 25 C 0.02 0.2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 10.7 20 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 189 - pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 - nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T - 40 to 150 J C Maximum storage temperature range T - 40 to 175 Stg Maximum thermal resistance, DC operation R 6.0 thJC junction to case See fig. 4 C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. MBRD320 Marking device Case style D-PAK (similar to TO-252AA) MBRD330 MBRD340 Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94313 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 14-Jan-11