X-On Electronics has gained recognition as a prominent supplier of SBRV660VCTT4G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SBRV660VCTT4G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SBRV660VCTT4G ON Semiconductor

SBRV660VCTT4G electronic component of ON Semiconductor
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Part No.SBRV660VCTT4G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers DPAK 2W SMT RECT
Datasheet: SBRV660VCTT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.219 ea
Line Total: USD 1.22 
Availability - 14894
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14894
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.219
10 : USD 0.9108
100 : USD 0.6647
500 : USD 0.56
1000 : USD 0.5164
2500 : USD 0.5037
10000 : USD 0.5014
25000 : USD 0.4899

   
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We are delighted to provide the SBRV660VCTT4G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SBRV660VCTT4G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Switch-mode Power Rectifiers DPAK3 Surface Mount Package MBRD620CT, NRVBD620VCT, SBRV620CT www.onsemi.com Series These stateoftheart devices are designed for use in switching SCHOTTKY BARRIER power supplies, inverters and as free wheeling diodes. RECTIFIERS Features 6.0 AMPERES, 20 60 VOLTS Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements DPAK CASE 369C AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 1 Mechanical Characteristics: 4 3 Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: AYWW 260C Max. for 10 Seconds B ESD Ratings: 6x0TG Machine Model = C Human Body Model = 3B A = Assembly Location* Y = Year WW = Work Week B6x0T = Device Code x = 2, 3, 4, 5, or 6 G = PbFree Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 15 MBRD620CT/DMBRD620CT, NRVBD620VCT, SBRV620CT Series MAXIMUM RATINGS MBRD/NRVBD/SBRV 620CT 630CT 640CT 650CT 660CT Rating Symbol Unit Peak Repetitive Reverse Voltage V 20 30 40 50 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) T = 130C C Per Diode 3 Per Device 6 Peak Repetitive Forward Current, I A FRM T = 130C (Square Wave, Duty = 0.5) C Per Diode 6 Nonrepetitive Peak Surge Current (Surge applied at rated load I 75 A FSM conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2 s, 1 kHz) I 1 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 6 C/W JC Maximum Thermal Resistance, JunctiontoAmbient (Note 2) R 80 C/W JA 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F i = 3 Amps, T = 25C 0.7 F C i = 3 Amps, T = 125C 0.65 F C i = 6 Amps, T = 25C 0.9 F C i = 6 Amps, T = 125C 0.85 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 25C) 0.1 C (Rated dc Voltage, T = 125C) 15 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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