SBS817-TL-E ON Semiconductor

Ordering number : ENA0734A SBS817 Schottky Barrier Diode SBS817 Electrical Characteristics at Ta=25C (Value per element) Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =1mA 15 V R R V1I =1.0A 0.33 0.39 V F F Forward Voltage V2I =2.0A 0.39 0.46 V F F Reverse Current I V =7.5V 300 A R R Interterminal Capacitance C V =10V, f-1MHz 35 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R 2 Thermal Resistance Rth(j-a) When mounted on ceramic substrate (900mm 0.8mm) 65 C / W *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). t Test Circuit rr Duty 10% 50 100 10 10 s --5V t rr Ordering Information Device Package Shipping memo SBS817-TL-E EMH8 3,000pcs./reel Pb Free I -- V I -- V F F R R 3 1.0E+05 2 1.0 1.0E+04 7 5 3 1.0E+03 2 0.1 7 1.0E+02 5 3 2 1.0E+01 0.01 7 5 1.0E+00 3 2 0.001 1.0E-01 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 2 4 6 8 101214 16 Forward Voltage, V -- V IT12192 Reverse Voltage, V -- V IT12193 F R No. A0734-2/6 100C --25C Ta=125 C 25C 0C 50C 75C 100C 50C 75C Ta=125C 25C 0C --25C Forward Current, I -- A F 100mA 100mA 10mA Reverse Current, I -- A R