SBS818-TL-E ON Semiconductor

Ordering number : ENA0471A SBS818 Schottky Barrier Diode SBS818 Electrical Characteristics at Ta=25C (Value per element) Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =1mA 30 V R R V1I =1.0A 0.37 0.42 V F F Forward Voltage V2I =1.5A 0.42 0.47 V F F V3I =2.0A 0.46 0.52 V F F Reverse Current I V =15V 350 A R R Interterminal Capacitance C V =10V, f-1MHz 30 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R When mounted in Cu-foiled area of Rth(j-a)1 100 C / W 2 Thermal Resistance 900mm 0.8mm on glass epoxy substrate 2 Rth(j-a)2 When mounted on ceramic substrate (900mm 0.8mm) 65 C / W *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). t Test Circuit rr Duty 10% 50 100 10 10 s --5V t rr Ordering Information Device Package Shipping memo SBS818-TL-E EMH8 3,000pcs./reel Pb Free I -- V I -- V F F R R 1.0E+06 3 2 1.0E+05 1.0 7 5 1.0E+04 3 2 1.0E+03 0.1 7 1.0E+02 5 3 1.0E+01 2 0.01 7 1.0E+00 5 3 1.0E-01 2 0.001 1.0E-02 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 05210 15 20530 35 Forward Voltage, V -- V IT12197 Reverse Voltage, V -- V IT12198 F R No. A0471-2/6 0C 50C 75C Ta=125C 100C 25C --25C 100C Ta=125C 50C 75C 25C 0C --25C Forward Current, I -- A F 100mA 100mA 10mA Reverse Current, I -- A R