SiC Schottky Diode LFUSCD15120A, 1200 V, 15 A, TO-220 2-lead RoHS Pb LFUSCD15120A Description The LFUSCD series of silicon carbide (SiC) Schottky di- odes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 C. The diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features Positive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Enhanced surge capability Circuit Diagram Applications 1 Case Boost diodes in power Uninterruptible power factor correction supplies Switch-mode power Solar inverters supplies Industrial motor drives 12 1 2 Maximum Ratings Characteristics Symbol Conditions Max. Unit DC Blocking Voltage V - 1200 V R Repetitive Peak Reverse Voltage, Tj 1200 V V RRM = 25 C Maximum DC Forward Current I T = 138 C 15 A F C Non-Repetitive Forward Surge I T = 25 C, 8.3 ms, half sine pulse 120 A FSM C Current T = 25 C, L = 10 mH, I = 5 A, j pk Non-Repetitive Avalanche Energy 132 mJ E AS V = 100 V DD 187 T = 25 C C Power Dissipation W P Tot 46 T = 138 C C Maximum Operating Junction 175 C T J,MAX Temperature Storage Temperature -55 to 175 C T STG Soldering Temperatures, Wavesoldering Only Allowed at 260 C T 1.6 mm from case for 10s sold Leads 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16SiC Schottky Diode LFUSCD15120A, 1200 V, 15 A, TO-220 2-lead Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.7 I = 15 A, T = 25 C F J Forward Voltage V V F - 2.5 3 I = 15 A, T = 175 C F J - 45 375 V = 1200 V , T = 25 C R J Reverse Current I A R - 90 1000 V = 1200 V , T = 175 C R J Total Capacitive Charge - 60 - nC Q V = 600 V, I = 15 A, di/dt = 250 A/s C R F - 750 - V = 1 V, f =1 MHz R Total Capacitance C V = 300 V, f = 1 MHz - 75 - pF R - 54 - V = 600 V, f = 1 MHz R Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 0.8 C/W R - JC Figure 1: Typical Reverse Characteristics Figure 2: Typical Foward Characteristics -4 1.E-0410 30 25 -5 1.E-05 10 20 -6 1.E-0610 15 -7 - 55 C 1.E-0710 10 25 C - 55 C 100 C -8 25 C 1.E-0810 150 C 5 175 C 175 C -9 10 0 1.E-09 012345 200400 600800 1000 1200 Forward Voltage, V (V) Reverse Voltage, V (V) F R 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 Reverse Current, I (A) R Forward Current, I (A) F