SBS811-TL-E ON Semiconductor

Ordering number : EN8254A SBS811 Schottky Barrier Diode SBS811 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =2.0mA 30 V R R I =1.0A 0.30 0.35 V F Forward Voltage V F I =2.0A 0.35 0.40 V F Reverse Current I V =15V 1.25 mA R R Interterminal Capacitance C V =10V, f=1MHz 75 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 20 ns rr F R 2 When Mounted in Cu-foiled area of 1.92mm 0.03mm Rth(j-a)1 75 C / W on glass epoxy substrate Thermal Resistance 2 Rth(j-a)2 When mounted on ceramic substrate (1000mm 0.8mm) 70 C / W t Test Circuit rr Duty 10% 50 100 10 10 s --5V t rr Ordering Information Device Package Shipping memo SBS811-TL-E VEC8 3,000pcs./reel Pb Free I -- V I -- V F F R R 100 10 7 7 5 3 5 2 10 3 7 5 2 3 2 1.0 1.0 7 7 5 3 5 2 0.1 3 7 5 2 3 2 0.01 0.1 7 7 5 3 5 2 0.001 3 7 5 2 3 2 0.01 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 05210 15 20530 35 Forward Voltage, V -- V IT08568 Reverse Voltage, V -- V IT08569 F R No.8254-2/6 100C 75C 50C 25C --25C Ta=125C 100C Ta=125C 75C 50C 25C --25C Forward Current, I -- A F 100mA 100mA 10mA Reverse Current, I -- mA R