BAS86 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring DESIGN SUPPORT TOOLS click logo to get started The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level Models Available applications This diode is also available in a DO-35 case with type MECHANICAL DATA designation BAT86 Case: MiniMELF (SOD-80) AEC-Q101 qualified Weight: approx. 31 mg Material categorization: for definitions of compliance Cathode band color: black please see www.vishay.com/doc 99912 Packaging codes/options: APPLICATIONS GS18/10K per 13 reel (8 mm tape), 10K/box Applications where a very low forward voltage is required GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS86 BAS86-GS18 or BAS86-GS08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reserve voltage V 50 V R (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current t < 1 s, 0.5 I 500 mA p FRM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Ambient operating temperature range T -65 to +125 C amb Storage temperature range T -65 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.0, 02-Jun-17 Document Number: 85511 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS86 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve breakdown voltage I = 10 A (pulsed) V 50 V R (BR) Leakage current V = 40 V I 5A R R Pulse test t < 300 s, p V 200 300 mV F I = 0.1 mA, < 2 % F Pulse test t < 300 s, p V 275 380 mV F I = 1 mA, < 2 % F Pulse test t < 300 s, p Forward voltage V 365 450 mV F I = 10 mA, < 2 % F Pulse test t < 300 s, p V 460 600 mV F I = 30 mA, < 2 % F Pulse test t < 300 s, p V 700 900 mV F I = 100 mA, < 2 % F Diode capacitance V = 1 V, f = 1 MHz C 8pF R D I = 10 mA, I = 10 mA, F R Reserve recovery time t 5ns rr i = 1 mA R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 500 V = 50 V T = 125 C 450 R j 400 100 350 T = 25 C j 300 10 250 P - Limit R at 100 %V 200 R 150 1 P - Limit R = 540 K/W thJA R 100 at 80 %V R 50 0.1 0 0 0.5 1.0 1.5 25 50 75 100 125 150 15829 V - Forward Voltage (V) 15827 T - Junction Temperature (C) F j Fig. 3 - Forward Current vs. Forward Voltage Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 10 10000 9 V =V f = 1 MHz R RRM 8 1000 7 6 5 100 4 3 10 2 1 0 1 0.1 1 10 100 25 50 75 100 125 150 15830 V - Reverse Voltage (V) R 15828 T - Junction Temperature (C) j Fig. 4 - Diode Capacitance vs. Reverse Voltage Fig. 2 - Reverse Current vs. Junction Temperature Rev. 2.0, 02-Jun-17 Document Number: 85511 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R C - Diode Capacitance (pF) I- Forward Current (A) D F