BAS86-M www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring The low forward voltage drop and fast switching DESIGN SUPPORT TOOLS click logo to get started make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications Models Available AEC-Q101 qualified Material categorization: for definitions of compliance MECHANICAL DATA please see www.vishay.com/doc 99912 Case: MiniMELF (SOD-80) APPLICATIONS Weight: approx. 31 mg Applications where a very low forward voltage is required Cathode band color: black Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS86-M BAS85-M-18 or BAS86-M-08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 50 V R (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current t 1 s, 0.5 I 500 mA p FRM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Ambient operating temperature range T -65 to +125 C amb Storage temperature range T -65 to +150 C S Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 10 A (pulsed) V 50 V R (BR) Leakage current V = 40 V I 5A R R Pulse test t < 300 s, I = 0.1 mA, < 2 % V 200 300 mV p F F Pulse test t < 300 s, I = 1 mA, < 2 % V 275 380 mV p F F Forward voltage Pulse test t < 300 s, I = 10 mA, < 2 % V 365 450 mV p F F Pulse test t < 300 s, I = 30 mA, < 2 % V 460 600 mV p F F Pulse test t < 300 s, I = 100 mA, < 2 % V 700 900 mV p F F Diode capacitance V = 1 V, f = 1 MHz C 8pF R D Reverse recovery time I = 10 mA, I = 10 mA, i = 1 mA t 5ns F R R rr Rev. 1.2, 02-Jun-17 Document Number: 83402 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS86-M www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 500 9 V = 50 V 450 R f = 1 MHz 8 400 7 350 6 300 5 250 P - Limit R 4 at 100 %V 200 R 3 150 P - Limit R = 540 K/W thJA R 2 100 at 80 %V R 1 50 0 0 0.1 1 10 100 25 50 75 100 125 150 V - Reverse Voltage (V) 15830 R 15827 T - Junction Temperature (C) j Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 4 - Diode Capacitance vs. Reverse Voltage Junction Temperature 10000 V =V R RRM 1000 100 10 1 25 50 75 100 125 150 15828 T - Junction Temperature (C) j Fig. 2 - Reverse Current vs. Junction Temperature 1000 T = 125 C j 100 T = 25 C j 10 1 0.1 0 0.5 1.0 1.5 15829 V - Forward Voltage (V) F Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.2, 02-Jun-17 Document Number: 83402 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I- Forward Current (A) P- Reverse Power Dissipation (mW) R R F C - Diode Capacitance (pF) D