BAT41-TAP Vishay

BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in a MiniMELF case with type designation LL41 AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 MECHANICAL DATA Models Available Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT41 BAT41-TR or BAT41-TAP Single BAT41 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM (1) Forward continuous current I 100 mA F (1) Repetitive peak forward current t < 1 s, < 0.5 I 350 mA p FRM (1) Surge forward current t = 10 ms I 750 mA p FSM (1) Power dissipation T = 65 C P 200 mW amb tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Valid provided that electrodes are Thermal resistance junction to ambient air R 300 K/W thJA kept at ambient temperature Junction temperature T 125 C j Ambient operating temperature range T -65 to +125 C amb Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT (1) Reverse breakdown voltage I = 100 A V 100 110 V R (BR) V = 50 V, T = 25 C I 100 nA R j R (1) Leakage current V = 50 V, T = 100 C I 20 A R j R I = 1 mA V 400 450 mV F F (1) Forward voltage I = 200 mA V 1000 mV F F Diode capacitance V = 1 V, f = 1 MHz C 2pF R D Note (1) Pulse test, t = 300 s p Rev. 1.8, 01-Jun-17 Document Number: 85659 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT41 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 100 200 T = 125 C j 150 10 100 1 - 40 C 0.1 50 25 C 0.01 0 0 50 100 150 0 400 200 600 800 1000 1200 T - Ambient Temperature (C) 18641 20225 V - Forward Voltage (mV) amb F Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Typical Forward Characteristics 100000 5.0 T = 125 C j 4.5 10000 4.0 100 C 3.5 75 C 1000 3.0 2.5 50 C 2.0 100 25 C 1.5 1.0 10 0.5 0 1 0 5 10 15 20 25 30 35 40 0 1020 3040506070 8090100 V - Reverse Voltage (V) 20227 20226 V - Reverse Voltage (V) R R Fig. 2 - Typical Reverse Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 01-Jun-17 Document Number: 85659 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Leakage Current (nA) R P - Power Dissipation (mW) tot 0.6 max. 0.024 0.4 min. 0.015 C - Diode Capacitance (pF) D I- Forward Current (mA) F 1.7 0.067 1.3 0.050