BAW78.../BAW79... Silicon Switching Diodes Switching applications High breakdown voltage 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAW78D BAW79D Type Package Configuration Marking BAW78D SOT89 single GD BAW79D SOT89 common cathode GH Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 400 V Diode reverse voltage V R 400 Peak reverse voltage V RM 1 A Forward current I F 1 Peak forward current I FM Peak forward current I 1 FM Surge forward current, t = 1 s I 10 FS Non-repetitive peak surge forward current I - FSM W Total power dissipation P tot BAW78D, T 125C 1 S BAW79D, T 115C 1 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-20BAW78.../BAW79... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAW78D 25 BAW79D 35 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I - - A R V = 400 V - - 1 R V = 400 V, T = 150 C 50 R A V Forward voltage V F I = 1 A - - 1.6 F I = 2 A - - 2 F AC Characteristics - 10 - pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - 1 - s rr I = 200mA, I = 200mA, measured at I = 20mA , F R R R = 100 L Test circuit for reverse recovery time D.U.T. Puls generator: t = 10s, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograp: R = 50 , t = 0.35ns r C 1pF EHN00019 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20