BAT42W, BAT43W
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
These diodes feature very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
For general purpose applications
AEC-Q101 qualified
MECHANICAL DATA Base P/N-E3 - RoHS-compliant, commercial grade
Case: SOD-123 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Weight: approx. 10.3 mg Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
INTERNAL
PART ORDERING CODE TYPE MARKING REMARKS
CONSTRUCTION
BAT42W-E3-08 or BAT42W-E3-18
BAT42W Single diode L2
BAT42W-HE3-08 or BAT42W-HE3-18
Tape and reel
BAT43W-E3-08 or BAT43W-E3-18
BAT43W Single diode L3
BAT43W-HE3-08 or BAT43W-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V 30 V
RRM
(1)
Forward continuous current I 200 mA
F
(1)
Repetitive peak forward current t < 1 s, < 0.5 I 500 mA
p FRM
(1)
Surge forward current t < 10 ms I 4A
p FSM
(1)
Power dissipation T = 65 C P 200 mW
amb tot
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 300 K/W
thJA
Junction temperature T 125 C
j
Operating temperature range T - 55 to + 125 C
op
Storage temperature range T - 55 to + 150 C
stg
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.8, 25-Feb-13 Document Number: 85661
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAT42W, BAT43W
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I = 100 A (pulsed) V 30 V
R (BR)
V = 25 V I 0.5 A
R R
(1)
Leakage current
V = 25 V, T = 100 C I 100 A
R j R
I = 200 mA V 1000 mV
F F
I = 10 mA BAT42W V 400 mV
F F
(1)
Forward voltage I = 50 mA BAT42W V 650 mV
F F
I = 2 mA BAT43W V 260 330 mV
F F
I = 15 mA BAT43W V 450 mV
F F
Diode capacitance V = 1 V, f = 1 MHz C 7pF
R D
I = 10 mA, I = 10 mA,
F R
Reverse recovery time t 5ns
rr
i = 1 mA, R = 100
R L
Note
(1)
Pulse test; t 300 s, t /T < 0.02
p p
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
250
1000
125 C
100
200
100 C
75 C
150
10
50 C
100
1
25 C
50
0.1
0
0.01
0 50 100 150 200
0 1020 3040 50
18442
T - Ambient Temperature (C) 18444
V - Reverse Voltage (V)
R
amb
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Typical Reverse Characteristics
1000
14
12
100
10
125 C - 40 C
10
8
25 C
6
1
4
0.1
2
0
0.01
015105202530
0 200 400 600 800 1000 1200
18445
V - Reverse Voltage (V)
18443 R
V - Instantaneous Forward Voltage (mV)
F
Fig. 2 - Typical Forward Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.8, 25-Feb-13 Document Number: 85661
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I- Forward Current (mA)
P - Power Dissipation (mW)
F
tot
C - Diode Capacitance (pF)
D I - Reverse Leackage Current (A)
R