X-On Electronics has gained recognition as a prominent supplier of BAT42-TAP Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAT42-TAP Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAT42-TAP Vishay

BAT42-TAP electronic component of Vishay
BAT42-TAP Vishay
BAT42-TAP Schottky Diodes & Rectifiers
BAT42-TAP  Semiconductors

Images are for reference only
See Product Specifications
Part No. BAT42-TAP
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30 Volt 200mA 4.0 Amp IFSM
Datasheet: BAT42-TAP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2425 ea
Line Total: USD 0.24 
Availability - 41608
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
41608
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 0.2425
10 : USD 0.1087
100 : USD 0.0948
500 : USD 0.0693
1000 : USD 0.0627
2500 : USD 0.0583
5000 : USD 0.0539
10000 : USD 0.0484
50000 : USD 0.0484

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAT42-TAP from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAT42-TAP and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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BAT42, BAT43 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications These diodes feature very low turn-on voltage and fast guard ring against excessive voltage, such as electrostatic discharges These diodes are also available in the SOD-123 case with the type designations BAT42W-V to BAT43W-V and in MiniMELF SOD-80 case with the type designations LL42 to LL43 AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammo tape (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT42 BAT42-TR or BAT42-TAP Single BAT42 Tape and reel/ammopack BAT43 BAT43-TR or BAT43-TAP Single BAT43 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current t < 1 s, < 0.5 I 500 mA p FRM (1) Surge forward current t < 10 ms I 4A p FSM (1) Power dissipation T = 65 C P 200 mW amb tot Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Ambient operating temperature range T -65 to +125 C amb Storage temperature range T -65 to +150 C stg Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Rev. 1.8, 01-Jun-17 Document Number: 85660 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT42, BAT43 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A (pulsed) V 30 V R (BR) V = 25 V I 0.5 A R R (1) Leakage current V = 25 V, T = 100 C I 100 A R j R I = 200 mA V 1000 mV F F I = 10 mA BAT42 V 400 mV F F (1) Forward voltage I = 50 mA BAT42 V 650 mV F F I = 2 mA BAT43 V 260 330 mV F F I = 15 mA BAT43 V 450 mV F F Diode capacitance V = 1 V, f = 1 MHz C 7pF R D I = 10 mA, I = 10 mA, F R Reserve recovery time t 5ns rr i = 1 mA, R = 100 R L R = 15 k, C = 300 pF, L L Rectification efficieny 80 % v f = 45 MHz, V = 2 V RF Note (1) Pulse test t < 300 s, t /T < 0.02 p p TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 250 1000 125 C 200 100 100 C 75 C 150 10 50 C 1 100 25 C 0.1 50 0.01 0 0 1020 3040 50 0 50 100 150 200 18444 V - Reverse Voltage (V) R 18442 T - Ambient Temperature (C) amb Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Typical Reverse Characteristics 1000 14 100 12 10 - 40 C 125 C 10 8 25 C 6 1 4 0.1 2 0 015105202530 0.01 0 200 400 600 800 1000 1200 18445 V - Reverse Voltage (V) R 18443 V - Instantaneous Forward Voltage (mV) F Fig. 2 - Typical Forward Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.8, 01-Jun-17 Document Number: 85660 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Forward Current (mA) F P - Power Dissipation (mW) tot C - Diode Capacitance (pF) I - Reverse Leackage Current (A) D R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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