SB2H90, SB2H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Low power losses and high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
DO-204AC (DO-15)
Solder dip 275 C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
PRIMARY CHARACTERISTICS
applications.
I 2.0 A
F(AV)
V 90 V, 100 V
RRM
MECHANICAL DATA
I 75 A
FSM
Case: DO-204AC (DO-15)
V 0.65 V
F Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
I 10 A
R
Note
T max. 175 C
J
SB2H100 for commercial grade only
Package DO-204AC (DO-15)
Terminals: Matte tin plated leads, solderable per
Diode variations Single
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL SB2H90 SB2H100 UNIT
Maximum repetitive peak reverse voltage V 90 100 V
RRM
Working peak reverse voltage V 90 100 V
RWM
Maximum DC blocking voltage V 90 100 V
DC
Maximum average forward rectified current at T = 25 C I 2.0 A
A F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 75 A
FSM
superimposed on rated load
Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 A
p RRM
Critical rate of rise of reverse voltage dV/dt 10 000 V/s
Storage temperature range T -55 to +175 C
STG
Maximum operating junction temperature T 175 C
J
Revision: 20-Mar-17 Document Number: 88718
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SB2H90, SB2H100
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL SB2H90 SB2H100 UNIT
T = 25 C 0.79
J
(1)
I = 2.0 A V V
Maximum instantaneous forward voltage
F F
T = 125 C 0.65
J
T = 25 C 10 A
J
(2)
Maximum reverse current at rated V I
R R
T = 125 C 4.0 mA
J
Notes
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL SB2H90 SB2H100 UNIT
(1)
R 45
JA
Typical thermal resistance C/W
(1)
R 14
JL
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SB2H90-E3/54 0.398 54 4000 13" diameter paper tape and reel
SB2H90-E3/73 0.398 73 2000 Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
4.0 100
3.0 10
T = 175 C
J
T = 100 C
J
2.0 1
T = 150 C
J
T = 125 C
J
1.0 0.1
T = 25 C
J
0 0.01
200 0.8 1.2
0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 1.0 1.4
Instantaneous Forward Voltage (V)
Ambient Temperature (C)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics
Revision: 20-Mar-17 Document Number: 88718
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Instantaneous Forward Current (A)