NSR05F40QNXT5G ON Semiconductor

NSR05F40QNXT5G Schottky Diode Optimized for High Frequency Switching Power Supplies These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale www.onsemi.com Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher 40 V SCHOTTKY efficiency and meeting reduced space requirements. BARRIER DIODE Features Low Forward Voltage Drop 420 mV @ 500 mA Low Reverse Current 15 A @ 10 V VR 1 2 CATHODE ANODE 500 mA of Continuous Forward Current ESD Rating Human Body Model: Class 3B ESD Rating Machine Model: Class C High Switching Speed 2 DSN2 Equivalent Processing and Electrical Performance as (0402) NSR05F40NXT5G CASE 152AC 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications MARKING DIAGRAMS LCD and Keypad Backlighting PIN 1 Camera Photo Flash 05F40 Buck and Boost dcdc Converters YYY Reverse Voltage and Current Protection Clamping and Protection 05F40 = Specific Device Code YYY = Year Code Markets Mobile Handsets PIN 1 MP3 Players ACM Digital Camera and Camcorders Notebook PCs & PDAs AC = Specific Device Code GPS M = Date Code MAXIMUM RATINGS Rating Symbol Value Unit ORDERING INFORMATION Reverse Voltage V 40 V R Device Package Shipping Forward Current (DC) I 500 mA F NSR05F40QNXT5G DSN2 5000 / Tape & Forward Surge Current I A FSM (PbFree) Reel (60 Hz @ 1 cycle) 10 For information on tape and reel specifications, Repetitive Peak Forward Current I 4.0 A FRM including part orientation and tape sizes, please (Pulse Wave = 1 sec, Duty Cycle = 66%) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ESD Rating: Human Body Model ESD > 8 kV Machine Model > 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2017 Rev. 2 NSR05F40Q/DNSR05F40QNXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 240 C/W  JA Total Power Dissipation @ T = 25C P 521 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 94 C/W JA Total Power Dissipation @ T = 25C P 1.3 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 15 R (V = 40 V) 75 R Forward Voltage V V F (I = 100 mA) 0.340 0.360 F (I = 500 mA) 0.420 0.460 F V AK V @ I F F V OUT T T ON OFF T F T S Figure 1. Voltage Waveform of Schottky Diode in Boost Application www.onsemi.com 2