NSR05F40QNXT5G
Schottky Diode Optimized
for High Frequency
Switching Power Supplies
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
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Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
40 V SCHOTTKY
efficiency and meeting reduced space requirements.
BARRIER DIODE
Features
Low Forward Voltage Drop 420 mV @ 500 mA
Low Reverse Current 15 A @ 10 V VR
1 2
CATHODE ANODE
500 mA of Continuous Forward Current
ESD Rating Human Body Model: Class 3B
ESD Rating Machine Model: Class C
High Switching Speed
2
DSN2
Equivalent Processing and Electrical Performance as
(0402)
NSR05F40NXT5G
CASE 152AC
1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
MARKING DIAGRAMS
LCD and Keypad Backlighting
PIN 1
Camera Photo Flash
05F40
Buck and Boost dcdc Converters
YYY
Reverse Voltage and Current Protection
Clamping and Protection
05F40 = Specific Device Code
YYY = Year Code
Markets
Mobile Handsets
PIN 1
MP3 Players
ACM
Digital Camera and Camcorders
Notebook PCs & PDAs
AC = Specific Device Code
GPS
M = Date Code
MAXIMUM RATINGS
Rating Symbol Value Unit
ORDERING INFORMATION
Reverse Voltage V 40 V
R
Device Package Shipping
Forward Current (DC) I 500 mA
F
NSR05F40QNXT5G DSN2 5000 / Tape &
Forward Surge Current I A
FSM
(PbFree) Reel
(60 Hz @ 1 cycle) 10
For information on tape and reel specifications,
Repetitive Peak Forward Current I 4.0 A
FRM
including part orientation and tape sizes, please
(Pulse Wave = 1 sec, Duty Cycle = 66%)
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ESD Rating: Human Body Model ESD > 8 kV
Machine Model > 400 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Semiconductor Components Industries, LLC, 2013
1 Publication Order Number:
May, 2017 Rev. 2 NSR05F40Q/DNSR05F40QNXT5G
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
JunctiontoAmbient (Note 1) R 240 C/W
JA
Total Power Dissipation @ T = 25C P 521 mW
A D
Thermal Resistance
JunctiontoAmbient (Note 2) R 94 C/W
JA
Total Power Dissipation @ T = 25C P 1.3 W
A D
Storage Temperature Range T 40 to +125 C
stg
Junction Temperature T +150 C
J
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
Reverse Leakage I A
R
(V = 10 V) 15
R
(V = 40 V) 75
R
Forward Voltage V V
F
(I = 100 mA) 0.340 0.360
F
(I = 500 mA) 0.420 0.460
F
V
AK
V @ I
F F
V
OUT
T T
ON OFF
T
F
T
S
Figure 1. Voltage Waveform of Schottky Diode in Boost Application
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