Silicon Carbide Schottky Diode 650 V, 8 A FFSM0865A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 5. Cathode 3, 4. Anode faster operating frequency, increased power density, reduced EMI, and 1, 2. Floating reduced system size and cost. Schottky Diode Features Max Junction Temperature 175C Pin1 5 Avalanche Rated 37 mJ High Surge Current Capacity 4 3 2 Positive Temperature Coefficient 1 Ease of Paralleling PQFN 8 8, 2P No Reverse Recovery/No Forward Recovery CASE 483AP This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant MARKING DIAGRAM Applications General Purpose Y&Z&3&K SMPS, Solar Inverter, UPS FFSM Power Switching Circuits 0865A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSM0865A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 3 FFSM0865A/DFFSM0865A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 37 mJ AS I Continuous Rectified Forward Current T < 145C 8 A F C Continuous Rectified Forward Current T < 135C 9.6 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 550 A F, Max C 520 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 49 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 25 A F,RM p Ptot Power Dissipation T = 25C 64 W C T = 150C 11 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 37 mJ is based on starting T = 25C, L = 1 mH, I = 8.7 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 2.35 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 8 A, T = 25C 1.50 1.75 V F F C I = 8 A, T = 125C 1.6 2.0 F C I = 8 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 27 nC C C Total Capacitance V = 1 V, f = 100 kHz 463 pF R V = 200 V, f = 100 kHz 48 R V = 400 V, f = 100 kHz 38 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSM0865A FFSM0865A PQFN 8x8, 2P 3000 Units / Tape & Reel (Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2