FFSP0665B Silicon Carbide Schottky Diode 650 V, 6 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, ELECTRICAL CONNECTION faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 26 mJ 1. Cathode 2. Anode High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 Applications 2 General Purpose TO2202LD CASE 340BB SMPS, Solar Inverter, UPS Power Switching Circuit ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 26 mJ AS I Continuous Rectified Forward Current 6.0 A F Y&Z&3&K T < 150C C FFSP 0665B Continuous Rectified Forward Current 8.0 T < 135C C I NonRepetitive T = 25C, 10 s 473 A F, Max C Peak Forward T = 150C, 10 s 408 Surge Current C Y = ON Semiconductor Logo &Z = Assembly Plant Code I NonRepetitive HalfSine Pulse, 28 A F, SM Forward t = 8.3 ms &3 = Numeric Date Code p Surge Current &K = Lot Code FFSP0665B = Specific Device Code P Power Dissipation T = 25C 49 W tot C T = 150C 8.3 C T , T Operating and Storage Temperature 55 to +175 C J STG ORDERING INFORMATION Range See detailed ordering and shipping information in the package Stresses exceeding those listed in the Maximum Ratings table may damage the dimensions section on page 2 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 26 mJ is based on starting T = 25C, L = 0.5 mH, I = 10.2 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 2 FFSP0665B/DFFSP0665B THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case, Max. 2.46 C/W JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP0665B TO220 Tube N/A N/A 50 Units FFSP0665B ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage I = 6 A, T = 25C 1.38 1.7 V F F C I = 6 A, T = 125C 1.6 2.0 F C I = 6 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.025 40 A R R C V = 650 V, T = 125C 0.08 80 R C V = 650 V, T = 175C 0.22 160 R C Q Total Capacitive Charge V = 400 V 15 nC C C Total Capacitance V = 1 V, f = 100 kHz 259 pF R V = 200 V, f = 100 kHz 29 R V = 400 V, f = 100 kHz 23 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2