FFSH4065ADN-F155 Silicon Carbide Schottky Diode 650 V, 40 A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher V I RRM F reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent 650 V 40 A thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features Max Junction Temperature 175C Avalanche Rated 95 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery 1 This Device is PbFree and is RoHS Compliant 2 3 TO2473LD Applications CASE 340CH General Purpose SMPS, Solar Inverter, UPS MARKING DIAGRAM Power Switching Circuits Y&Z&3&K FFSH 4065ADN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH4065ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 1 FFSH4065ADNF155/DFFSH4065ADN F155 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter FFSH4065ADNF155 Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 95 mJ AS I A Continuous Rectified Forward Current TC < 140C 20* / 40** F Continuous Rectified Forward Current TC < 135C 22* / 44** I NonRepetitive Peak Forward Surge Current TC = 25C, 10 s 1100 A F, Max TC = 150C, 10 s 1000 A I NonRepetitive Forward Surge Current 105 A F, SM I Repetitive Forward Surge Current 58 A F, RM P Power Dissipation TC = 25C 150 W tot TC = 150C 25 W T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Per leg. **Per Device. 1. E of 95 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.5 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, Junction to Case, Max. 1.0* / 0.5** C/W JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSH4065ADNF155 FFSH4065ADN TO-247 Long Lead Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage IF = 20 A, TC = 25C 1.5 1.75 V F IF = 20 A, TC = 125C 1.6 2.0 IF = 20 A, TC = 175C 1.72 2.4 I Reverse Current VR = 650 V, TC = 25C 200 A R VR = 650 V, TC = 125C 400 VR = 650 V, TC = 175C 600 Q Total Capacitance Charge V = 400 V 64 nC C C Total Capacitance VR = 1 V, f = 100 kHz 1085 pF VR = 200 V, f = 100 kHz 117 VR = 400 V, f = 100 kHz 88 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2