FFSH1665ADN-F155 Silicon Carbide Schottky Diode 650 V, 16 A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Schottky Diode Max Junction Temperature 175C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant TO2473LD CASE 340CH Applications General Purpose SMPS, Solar Inverter, UPS MARKING DIAGRAM Power Switching Circuits Y&Z&3&K FFSH 1665ADN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH1665ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 2 FFSH1665ADNF155/DFFSH1665ADN F155 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 49 mJ AS I Continuous Rectified Forward Current T < 150C 8*/16** A F C Continuous Rectified Forward Current T < 135C 11*/22** C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 750 A F, Max C 730 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 49 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 34 A F,RM p Ptot Power Dissipation T = 25C 77 W C T = 150C 13 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 64 mJ is based on starting T = 25C, L = 0.5 mH, I = 14 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 1.96*/0.95** C/W JC NOTE: * Per Leg, ** Per Device ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 8 A, T = 25C 1.5 1.75 V F F C I = 8 A, T = 125C 1.6 2.0 F C I = 8 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 27 nC C C Total Capacitance V = 1 V, f = 100 kHz 463 pF R V = 200 V, f = 100 kHz 48 R V = 400 V, f = 100 kHz 38 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH1665ADNF155 FFSH1665ADN TO2473LD 30 Units www.onsemi.com 2