FFSH2065B-F085 Silicon Carbide Schottky Diode 650 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new www.onsemi.com technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and 1. 2. Cathode Anode reduced system size & cost. Features Schottky Diode Max Junction Temperature 175C Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AECQ101 Qualified and PPAP Capable TO2472LD These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 340DA Compliant Applications MARKING DIAGRAM Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Unit Ratings Unit Y&Z&3&K V FFSH V Peak Repetitive Reverse Voltage 650 RRM 2065B mJ E Single Pulse Avalanche Energy (Note 1) 94 AS A T < 141C I Continuous Rectified Forward C 20 F Current T < 135C C 22.3 A T = 25C, 10 s I NonRepetitive Peak Forward C 889 F, Max Surge Current T = 150C, 10 s C 861 Y = ON Semiconductor Logo &Z = Assembly Plant Code A HalfSine Pulse, I NonRepetitive Forward 84 F, SM &3 = Numeric Date Code t = 8.3 ms p Surge Current &K = Lot Code T = 25C C FFSH2065B = Specific Device Code W T = 25C Ptot Power Dissipation C 148 T = 150C C 25 ORDERING INFORMATION See detailed ordering and shipping information on page 2 T ,T Operating and Storage Temperature Range 55 to C J STG of this data sheet. +175 TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 94 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.4 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2019 Rev. 0 FFSH2065BF085/DFFSH2065B F085 THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Case, Max 1.01 JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage I = 20 A, T = 25C 1.38 1.7 V F F C I = 20 A, T = 125C 1.6 2.0 F C I = 20 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.5 40 A R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 51 nC C C Total Capacitance V = 1 V, f = 100 kHz 866 pF R V = 300 V, f = 100 kHz 80 R V = 600 V, f = 100 kHz 70 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping FFSH2065BF085 FFSH2065B TO2472LD 30 Units/Tube (PbFree/Halogen Free) www.onsemi.com 2