X-On Electronics has gained recognition as a prominent supplier of RB218NS-30FHTL Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. RB218NS-30FHTL Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

RB218NS-30FHTL ROHM

RB218NS-30FHTL electronic component of ROHM
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See Product Specifications
Part No.RB218NS-30FHTL
Manufacturer: ROHM
Category: Schottky Diodes & Rectifiers
Description: Diode Array 1 Pair Common Cathode Schottky 30 V 20A Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet: RB218NS-30FHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1246 ea
Line Total: USD 2.12 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 1.0065

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.0412
10 : USD 1.7579
100 : USD 1.4132
500 : USD 1.1611

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.0412
10 : USD 1.7579
100 : USD 1.4132
500 : USD 1.1611

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.1246
10 : USD 1.697
100 : USD 1.356
500 : USD 1.098

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.8638

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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We are delighted to provide the RB218NS-30FHTL from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RB218NS-30FHTL and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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RB218NS-30FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 30 V R I 20 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Super Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB218NS30 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 35 V RM Reverse voltage V Reverse direct voltage 30 V R 60Hz half sin waveformresistive load Average rectified forward current I 20 A o I /2 per diodeT =120Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a Junction temperature T - 150 j Storage temperature T - -55 150 stg Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RB218NS-30FH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =10A - - 0.72 V F F (1) I V =30V Reverse current - - 5 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.4 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.85 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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