RB225T100 ROHM

Schottky barrier diode RB225T100 Applications Dimensions (Unit : mm) Structure Switching power supply 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 Features (1) (2) (3) 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.2 1.3 0.8 Construction (1) (2) (3) 0.70.1 Silicon epitaxial planar 2.60.5 0.05 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 110 V RM Reverse voltage (DC) V 110 V R Average rectified forward current(*1) Io 30 A I 100 Forward current surge peak (60Hz/1cyc) (*1) A FSM Junction temperature 150 Tj C Storage temperature -40 to +150 Tstg C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=99 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.86 V I =15A F F I Reverse current - - 400 A V =100V R R Thermal impedance - - 1.75 junction to case jc C/W www.rohm.com 2010.02 - Rev.C 1/3 2010 ROHM Co., Ltd. All rights reserved. 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0RB225T100 Data Sheet Electrical characteristics curves Ta=150C 10000 100 10000 Ta=125C f=1MHz f=1MHz 1000 Ta=150C 10 1000 100 Ta=75C Ta=125C 10 1 Ta=25C Ta=25C 100 Ta=75C 1 0.1 Ta=-25C 0.1 Ta=-25C 10 0.01 0.01 0.001 0.0001 1 0.001 0 1020 3040506070 8090 100 0 102030 0 100 200 300 400 500 600 700 800 900 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R FORWARD VOLTAGE:V (mV) F V -Ct CHARACTERISTICS V -I CHARACTERISTICS R R R V -I CHARACTERISTICS F F 1000 2000 780 Ta=25C Ta=25C 900 Ta=25C V =100V R I =15A f=1MHz F 800 1900 770 n=30pcs n=30pcs V =0V R 700 n=10pcs 600 760 1800 500 400 750 1700 AVE:478.3nA 300 AVE:752.6mV 200 740 1600 100 AVE:1914.5pF 0 730 1500 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 1000 30 Ta=25C Ifsm 1cyc Ifsm I =0.5A 250 F Ifsm 25 I =1A 83 R 8.3ms 8.3ms Irr=0.25*I 8.3ms R 200 100 1cyc 20 n=10pcs 150 15 10 100 10 50 5 AVE:237.0A AVE:24.3pF 1 0 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 50 Mounted on epoxy board 100 1000 IM=100mA 45 I =10A F Ifsm 40 t 1ms tim D=1/2 35 Rth(j-a) 10 300us 30 Sin( =180) 25 100 20 DC Rth(j-c) 1 15 10 5 0 10 0.1 0 5 10 15 20 25 30 35 40 45 50 1 10 100 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(ms) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.C PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (uA) R TRANSIENT RESERVE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)