RB225T-60 ROHM

Data Sheet Schottky barrier diode RB225T-60 Applications Dimensions (Unit : mm) Structure Switching power supply 4.50.3 0.1 2.80.2 10.00.3 0.1 Features 0.1 (1) (2) (3) 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.2 Construction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 60 V RM Reverse voltage (DC) V 60 V R 30 Average rectified forward current(*1) Io A 100 Forward current surge peak (60Hz/1cyc) (*1) I A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward characteristics V - - 0.63 V I =15A F F I Reverse characteristics - - 600 A V =60V R R Thermal impedance - - 1.75 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0RB225T-60 Data Sheet Electrical characteristic curves Ta=150 C Ta=125 C 1000000 10000 100 f=1MHz 100000 Ta=150 C 1000 10 10000 Ta=75 C Ta=125 C 1000 Ta=25C 100 1 Ta=-25C 100 Ta=25 C Ta=-25 C 10 10 0.1 Ta=75 C 1 1 0.1 0.01 0 5 10 15 20 25 30 0 1020 30405060 0 100 200 300 400 500 600 700 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) F R R V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F V -I CHARACTERISTICS R R R 600 500 2200 Ta=25 C Ta=25C 450 I =15A Ta=25 C F V =60V R f=1MHz 590 n=30pcs 2150 400 n=30pcs V =0V R 350 n=10pcs 2100 580 300 250 2050 570 200 2000 AVE:70.1uA 150 560 100 1950 AVE:2030.9pF 50 AVE:580.0mV 550 0 1900 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 30 1000 Ta=25C Ifsm 1cyc I =0.5A 250 Ifsm F 25 I =1A R 8.3ms 8.3ms 8.3ms Irr=0.25*I R 200 20 100 1cyc n=10pcs 150 15 AVE:176.0A 100 10 10 AVE:23.3ns 50 5 1 0 0 110 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 50 1000 100 IM=100mA I =10A F Ifsm 40 DC t 1ms time D=1/2 10 Rth(j-a) 300us 30 100 Sin( =180) 20 Rth(j-c) 1 10 10 0 0.1 1 10 100 0 1020 304050 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (uA) R TRANSIENT REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)